onsemi Single FETs, MOSFETs FDP39N20

Description
N-Channel 200V 39A (Tc) 251W (Tc) Through Hole TO-220-3
Request a Quote Datasheet
Description
N-Channel 200V 39A (Tc) 251W (Tc) Through Hole TO-220-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FDP39N20-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDP39N20-ND
Single FETs, MOSFETs FDP39N20-ND
N-Channel 200V 39A (Tc) 251W (Tc) Through Hole TO-220-3

N-Channel 200V 39A (Tc) 251W (Tc) Through Hole TO-220-3

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP39N20 - 067021-FDP39N20 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP39N20
067021-FDP39N20
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP39N20 067021-FDP39N20
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067021-FDP39N20 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 251W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 39A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 49nC @ 10V Max Input Capacitance: 2130pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 66 mOhm @ 19.5A, 10V Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Limited Quantity per package: 1k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067021-FDP39N20
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 251W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 39A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 49nC @ 10V
Max Input Capacitance: 2130pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 66 mOhm @ 19.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Limited
Quantity per package: 1k pcs

Buy Now Datasheet
Single FETs, MOSFETs - FDP39N20 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDP39N20
Single FETs, MOSFETs FDP39N20
MOSFET N-CH 200V 39A TO220-3

MOSFET N-CH 200V 39A TO220-3

Supplier's Site Datasheet
Single FETs, MOSFETs - FDP39N20 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDP39N20
Single FETs, MOSFETs FDP39N20
POWER FIELD-EFFECT TRANSISTOR, 3

POWER FIELD-EFFECT TRANSISTOR, 3

Supplier's Site Datasheet
Mosfet, N-Ch, 200V, 39A, To-220; Channel Type Onsemi - 86K1370 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 200V, 39A, To-220; Channel Type Onsemi
86K1370
Mosfet, N-Ch, 200V, 39A, To-220; Channel Type Onsemi 86K1370
MOSFET, N-CH, 200V, 39A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:39A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V RoHS Compliant: Yes

MOSFET, N-CH, 200V, 39A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:39A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDP39N20 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDP39N20
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDP39N20
MOSFET N-CH 200V 39A TO220-3

MOSFET N-CH 200V 39A TO220-3

Supplier's Site
Sheung Wan, Hong Kong
MOSFET
FDP39N20
MOSFET FDP39N20
MOSFET SINGLE N-CH 200V ULTRAFET TRENCH

MOSFET SINGLE N-CH 200V ULTRAFET TRENCH

Buy Now Datasheet

Technical Specifications

  DigiKey Win Source Electronics ODG (Origin Data Global) Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number FDP39N20-ND 067021-FDP39N20 FDP39N20 86K1370 FDP39N20 FDP39N20
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP39N20 Single FETs, MOSFETs Mosfet, N-Ch, 200V, 39A, To-220; Channel Type Onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel; N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 TO-220; SOT3; TO-220AB TO-220; TO-220-3 TO-3; TO-220 TO-220; TO-220-3
V(BR)DSS 200 volts 200 volts
PD 251000 milliwatts 251000 milliwatts
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