onsemi Single FETs, MOSFETs FDP39N20

Description
N-Channel 200V 39A (Tc) 251W (Tc) Through Hole TO-220-3
  • Single FETs, MOSFETs - FDP39N20-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - FDP39N20 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - FDP39N20 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP39N20 - 067021-FDP39N20 - Win Source Electronics
    Win Source Electronics
  • Mosfet, N-Ch, 200V, 39A, To-220; Channel Type Onsemi - 86K1370 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDP39N20 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
N-Channel 200V 39A (Tc) 251W (Tc) Through Hole TO-220-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FDP39N20-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDP39N20-ND
Single FETs, MOSFETs FDP39N20-ND
N-Channel 200V 39A (Tc) 251W (Tc) Through Hole TO-220-3

N-Channel 200V 39A (Tc) 251W (Tc) Through Hole TO-220-3

Buy Now Datasheet
Single FETs, MOSFETs - FDP39N20 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDP39N20
Single FETs, MOSFETs FDP39N20
MOSFET N-CH 200V 39A TO220-3

MOSFET N-CH 200V 39A TO220-3

Supplier's Site Datasheet
Single FETs, MOSFETs - FDP39N20 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDP39N20
Single FETs, MOSFETs FDP39N20
POWER FIELD-EFFECT TRANSISTOR, 3

POWER FIELD-EFFECT TRANSISTOR, 3

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP39N20 - 067021-FDP39N20 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP39N20
067021-FDP39N20
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP39N20 067021-FDP39N20
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067021-FDP39N20 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 251W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 39A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 49nC @ 10V Max Input Capacitance: 2130pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 66 mOhm @ 19.5A, 10V Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Limited Quantity per package: 1k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067021-FDP39N20
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 251W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 39A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 49nC @ 10V
Max Input Capacitance: 2130pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 66 mOhm @ 19.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Limited
Quantity per package: 1k pcs

Buy Now Datasheet
Mosfet, N-Ch, 200V, 39A, To-220; Channel Type Onsemi - 86K1370 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 200V, 39A, To-220; Channel Type Onsemi
86K1370
Mosfet, N-Ch, 200V, 39A, To-220; Channel Type Onsemi 86K1370
MOSFET, N-CH, 200V, 39A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:39A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V RoHS Compliant: Yes

MOSFET, N-CH, 200V, 39A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:39A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V RoHS Compliant: Yes

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
FDP39N20
MOSFET FDP39N20
MOSFET SINGLE N-CH 200V ULTRAFET TRENCH

MOSFET SINGLE N-CH 200V ULTRAFET TRENCH

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDP39N20 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDP39N20
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDP39N20
MOSFET N-CH 200V 39A TO220-3

MOSFET N-CH 200V 39A TO220-3

Supplier's Site

Technical Specifications

  DigiKey ODG (Origin Data Global) Win Source Electronics Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FDP39N20-ND FDP39N20 067021-FDP39N20 86K1370 FDP39N20 FDP39N20
Product Name Single FETs, MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP39N20 Mosfet, N-Ch, 200V, 39A, To-220; Channel Type Onsemi MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 TO-220; TO-220-3 TO-220; SOT3; TO-220AB TO-3; TO-220 TO-220; TO-220-3
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 200 volts 200 volts
Unlock Full Specs
to access all available technical data