MOSFET N-CH 200V 39A TO220-3
POWER FIELD-EFFECT TRANSISTOR, 3
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067021-FDP39N20
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 251W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 39A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 49nC @ 10V
Max Input Capacitance: 2130pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 66 mOhm @ 19.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Limited
Quantity per package: 1k pcs
N-Channel 200V 39A (Tc) 251W (Tc) Through Hole TO-220-3
MOSFET SINGLE N-CH 200V ULTRAFET TRENCH
MOSFET, N-CH, 200V, 39A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:39A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V RoHS Compliant: Yes
MOSFET N-CH 200V 39A TO220-3
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | FDP39N20 | 067021-FDP39N20 | FDP39N20-ND | FDP39N20 | 86K1370 | FDP39N20 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP39N20 | Single FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 200V, 39A, To-220; Channel Type Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 200 volts | 200 volts | ||||
| IDSS | 39000 milliamps | 39000 milliamps |
