Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 091511-FDP3682
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 95W (Tc)
Family Name: FDP3682
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 6A (Ta), 32A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 28nC @ 10V
Max Input Capacitance: 1250pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 36 mOhm @ 32A, 10V
Alternative Parts (Cross-Reference): BUK7540-100A; BUK7540-100A,127; IRF1310N;
Introduction Date: June 11, 2002
ECCN: EAR99
Country of Origin: China, United States of America
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Balance
Quantity per package: 800
MOSFET N-CH 100V 6A/32A TO220-3
N-Channel 100V 6A (Ta), 32A (Tc) 95W (Tc) Through Hole TO-220-3
TRANSISTOR, N CHANNEL MOSFET, 100V, 32A, TO-220AB, ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
MOSFET N-CH 100V 6A/32A TO220-3
100V 36mΩ@10V,32A 95W 4V@250uA N Channel TO-220 MOSFETs ROHS
N CHANNEL MOSFET, 100V, 32A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:32A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes
| Win Source Electronics | ODG (Origin Data Global) | DigiKey | Radwell International | Shenzhen Shengyu Electronics Technology Limited | LCSC Electronics Technology (HK) Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 091511-FDP3682 | FDP3682 | FDP3682-ND | 16115118 | FDP3682 | FDP3682 | FDP3682 | 28H9701 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP3682 | Single FETs, MOSFETs | Single FETs, MOSFETs | Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Triode/MOS Tube/Transistor >> MOSFETs | MOSFET | N Channel Mosfet, 100V, 32A, To-220Ab; Channel Type Onsemi |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | |||
| V(BR)DSS | 100 volts | 100 volts | 100 volts | |||||
| PD | 95000 milliwatts | 95000 milliwatts | 95000 milliwatts | |||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | |||||
| Package Type | TO-220; SOT3; TO-220-3 | TO-220; TO-220-3 | TO-220; TO-220-3 | TO-220; TO-220-3 | TO-220 | TO-3; TO-220 |