MOSFETs 100V 61a 0.016 Ohm Product overview: FDP3652 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 61a, 0.016 Ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 61a, 0.016 Ohm, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDP3652 can be used for catalog matching and distributor lookup.
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067019-FDP3652
Packaging: Bulk
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 150W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Not For New Designs
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 9A (Ta), 61A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 53nC @ 10V
Max Input Capacitance: 2880pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 16 mOhm @ 61A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Balance
Quantity per package: 800
MOSFET N-CH 100V 9A/61A TO220-3
N-Channel 100V 9A (Ta), 61A (Tc) 150W (Tc) Through Hole TO-220-3
MOSFET N-CH 100V 9A/61A TO220-3
N CHANNEL MOSFET, 100V, 61A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:61A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | ODG (Origin Data Global) | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 2088-FDP3652 | 067019-FDP3652 | FDP3652 | FDP3652-ND | FDP3652 | 58K8847 | FDP3652 |
| Product Name | 100V 61a 0.016 Ohm MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP3652 | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | N Channel Mosfet, 100V, 61A, To-220Ab; Channel Type Onsemi | MOSFET |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | ||
| MOSFET Operating Mode | Enhancement | ||||||
| PD | 150 milliwatts | 150000 milliwatts | 150000 milliwatts | ||||
| Package Type | Tube | TO-220; SOT3; TO-220-3 | TO-220; TO-220-3 | TO-220; TO-220-3 | TO-220; TO-220-3 | TO-3; TO-220 | |
| Packing Method | Tube | Bulk; Bulk | Tube; Tube |
