onsemi Single FETs, MOSFETs FDP3652

Description
N-Channel 100V 9A (Ta), 61A (Tc) 150W (Tc) Through Hole TO-220-3
  • Single FETs, MOSFETs - FDP3652-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP3652 - 067019-FDP3652 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - FDP3652 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDP3652 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • N Channel Mosfet, 100V, 61A, To-220Ab; Channel Type Onsemi - 58K8847 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
N-Channel 100V 9A (Ta), 61A (Tc) 150W (Tc) Through Hole TO-220-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FDP3652-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDP3652-ND
Single FETs, MOSFETs FDP3652-ND
N-Channel 100V 9A (Ta), 61A (Tc) 150W (Tc) Through Hole TO-220-3

N-Channel 100V 9A (Ta), 61A (Tc) 150W (Tc) Through Hole TO-220-3

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP3652 - 067019-FDP3652 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP3652
067019-FDP3652
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP3652 067019-FDP3652
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067019-FDP3652 Packaging: Bulk Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 150W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Not For New Designs Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 9A (Ta), 61A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 53nC @ 10V Max Input Capacitance: 2880pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 16 mOhm @ 61A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Balance Quantity per package: 800

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067019-FDP3652
Packaging: Bulk
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 150W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Not For New Designs
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 9A (Ta), 61A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 53nC @ 10V
Max Input Capacitance: 2880pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 16 mOhm @ 61A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Balance
Quantity per package: 800

Buy Now Datasheet
Single FETs, MOSFETs - FDP3652 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDP3652
Single FETs, MOSFETs FDP3652
MOSFET N-CH 100V 9A/61A TO220-3

MOSFET N-CH 100V 9A/61A TO220-3

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDP3652 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDP3652
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDP3652
MOSFET N-CH 100V 9A/61A TO220-3

MOSFET N-CH 100V 9A/61A TO220-3

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
FDP3652
MOSFET FDP3652
MOSFET 100V 61a 0.016 Ohm

MOSFET 100V 61a 0.016 Ohm

Buy Now Datasheet
N Channel Mosfet, 100V, 61A, To-220Ab; Channel Type Onsemi - 58K8847 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 100V, 61A, To-220Ab; Channel Type Onsemi
58K8847
N Channel Mosfet, 100V, 61A, To-220Ab; Channel Type Onsemi 58K8847
N CHANNEL MOSFET, 100V, 61A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:61A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

N CHANNEL MOSFET, 100V, 61A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:61A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number FDP3652-ND 067019-FDP3652 FDP3652 FDP3652 FDP3652 58K8847
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP3652 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET N Channel Mosfet, 100V, 61A, To-220Ab; Channel Type Onsemi
Polarity N-Channel N-Channel; N-Channel N-Channel; N-Channel N-Channel
Package Type TO-220; TO-220-3 TO-220; SOT3; TO-220-3 TO-220; TO-220-3 TO-220; TO-220-3 TO-3; TO-220
V(BR)DSS 100 volts 100 volts
PD 150000 milliwatts 150000 milliwatts
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