Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067018-FDP3651U
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 255W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 80A (Tc)
Gate-Source Threshold Voltage: 5.5V @ 250μA
Max Gate Charge: 69nC @ 10V
Max Input Capacitance: 5522pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 18 mOhm @ 80A, 10V
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Balance
Quantity per package: 800
N-Channel 100V 80A (Tc) 255W (Tc) Through Hole TO-220-3
MOSFETs 100V 80A 18 mOHM NCH POWER TREN Product overview: FDP3651U from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 80A, 18 mOHM. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 80A, 18 mOHM, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDP3651U can be used for catalog matching and distributor lookup.
MOSFET N-CH 100V 80A TO220-3
MOSFET 100V 80A 15 OHM NCH POWER TREN
MOSFET Transistor, N Channel, 80 A, 100 V, 18 mohm, 10 V, 4.5 V RoHS Compliant: Yes
MOSFET N-CH 100V 80A TO220-3
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 067018-FDP3651U | FDP3651U-ND | 2088-FDP3651U | FDP3651U | FDP3651U | 34M6122 | FDP3651U |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP3651U | Single FETs, MOSFETs | 100V 80A 18 mOHM MOSFET Transistor | Single FETs, MOSFETs | MOSFET | Mosfet Transistor, N Channel, 80 A, 100 V, 18 Mohm, 10 V, 4.5 V Rohs Compliant Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | ||
| V(BR)DSS | 100 volts | 100 volts | |||||
| PD | 255000 milliwatts | 255 milliwatts | 255000 milliwatts | ||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | |||||
| Package Type | TO-220; SOT3; TO-220-3 | TO-220; TO-220-3 | Tube | TO-220; TO-220-3 | TO-3 | TO-220; TO-220-3 |
