onsemi Single FETs, MOSFETs FDP3632

POWER FIELD-EFFECT TRANSISTOR, 1

MOSFET N-CH 100V 12A/80A TO220-3

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 090823-FDP3632
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 310W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Not For New Designs
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 12A (Ta), 80A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 110nC @ 10V
Max Input Capacitance: 6000pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 9 mOhm @ 80A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Balance
Quantity per package: 800

MOSFETs 100V 80a .9 Ohms/VGS=1V Product overview: FDP3632 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 80a, 1V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 80a, 1V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDP3632 can be used for catalog matching and distributor lookup.

N-Channel 100V 12A (Ta), 80A (Tc) 310W (Tc) Through Hole TO-220-3