onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP3632 FDP3632

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 090823-FDP3632 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 310W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Not For New Designs Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 12A (Ta), 80A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 110nC @ 10V Max Input Capacitance: 6000pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 9 mOhm @ 80A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Balance Quantity per package: 800
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP3632 - 090823-FDP3632 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - FDP3632-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - FDP3632 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - FDP3632 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Transistor - 16115106 - Radwell International
    Radwell International
  • N Channel Mosfet, 100V, 80A, To-220Ab; Channel Type Onsemi - 28H9699 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDP3632 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 090823-FDP3632 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 310W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Not For New Designs Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 12A (Ta), 80A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 110nC @ 10V Max Input Capacitance: 6000pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 9 mOhm @ 80A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Balance Quantity per package: 800
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP3632 - 090823-FDP3632 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP3632
090823-FDP3632
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP3632 090823-FDP3632
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 090823-FDP3632 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 310W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Not For New Designs Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 12A (Ta), 80A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 110nC @ 10V Max Input Capacitance: 6000pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 9 mOhm @ 80A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Balance Quantity per package: 800

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 090823-FDP3632
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 310W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Not For New Designs
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 12A (Ta), 80A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 110nC @ 10V
Max Input Capacitance: 6000pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 9 mOhm @ 80A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Balance
Quantity per package: 800

Buy Now Datasheet
Single FETs, MOSFETs - FDP3632-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDP3632-ND
Single FETs, MOSFETs FDP3632-ND
N-Channel 100V 12A (Ta), 80A (Tc) 310W (Tc) Through Hole TO-220-3

N-Channel 100V 12A (Ta), 80A (Tc) 310W (Tc) Through Hole TO-220-3

Buy Now Datasheet
Single FETs, MOSFETs - FDP3632 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDP3632
Single FETs, MOSFETs FDP3632
POWER FIELD-EFFECT TRANSISTOR, 1

POWER FIELD-EFFECT TRANSISTOR, 1

Supplier's Site Datasheet
Single FETs, MOSFETs - FDP3632 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDP3632
Single FETs, MOSFETs FDP3632
MOSFET N-CH 100V 12A/80A TO220-3

MOSFET N-CH 100V 12A/80A TO220-3

Supplier's Site Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
100V 80a 1V MOSFET Transistor
2088-FDP3632
100V 80a 1V MOSFET Transistor 2088-FDP3632
MOSFETs 100V 80a .9 Ohms/VGS=1V Product overview: FDP3632 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 80a, 1V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 80a, 1V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDP3632 can be used for catalog matching and distributor lookup.

MOSFETs 100V 80a .9 Ohms/VGS=1V Product overview: FDP3632 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 80a, 1V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 80a, 1V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDP3632 can be used for catalog matching and distributor lookup.

Supplier's Site
Transistor - 16115106 - Radwell International
Radwell International
Willingboro, NJ, United States
Transistor
16115106
Transistor 16115106
DISCONTINUED BY MANUFACTURER, POWER FIELD-EFFECT TRANSISTOR, 12A, 100V, 0.009OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB. FREE 2 YEAR RADWELL WARRANTY

DISCONTINUED BY MANUFACTURER, POWER FIELD-EFFECT TRANSISTOR, 12A, 100V, 0.009OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
N Channel Mosfet, 100V, 80A, To-220Ab; Channel Type Onsemi - 28H9699 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 100V, 80A, To-220Ab; Channel Type Onsemi
28H9699
N Channel Mosfet, 100V, 80A, To-220Ab; Channel Type Onsemi 28H9699
N CHANNEL MOSFET, 100V, 80A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:80A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

N CHANNEL MOSFET, 100V, 80A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:80A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDP3632 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDP3632
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDP3632
MOSFET N-CH 100V 12A/80A TO220-3

MOSFET N-CH 100V 12A/80A TO220-3

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
FDP3632
MOSFET FDP3632
MOSFET 100V 80a .9 Ohms/VGS=1V

MOSFET 100V 80a .9 Ohms/VGS=1V

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. Radwell International Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 090823-FDP3632 FDP3632-ND FDP3632 2088-FDP3632 16115106 28H9699 FDP3632 FDP3632
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP3632 Single FETs, MOSFETs Single FETs, MOSFETs 100V 80a 1V MOSFET Transistor Transistor N Channel Mosfet, 100V, 80A, To-220Ab; Channel Type Onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 100 volts 100 volts
PD 310000 milliwatts 310000 milliwatts 310 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
Package Type TO-220; SOT3; TO-220-3 TO-220; TO-220-3 TO-220; TO-220-3 Tube TO-3; TO-220 110 nC @ 10 V
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