onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP2614 FDP2614

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067017-FDP2614 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 260W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 62A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 99nC @ 10V Max Input Capacitance: 7230pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 27 mOhm @ 31A, 10V Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Limited Quantity per package: 800
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP2614 - 067017-FDP2614 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - FDP2614FS-ND - DigiKey
    DigiKey
  • Mosfet, N Channel, 200V, 0.0229Ohm, 62A, To-220-3; Channel Type Onsemi - 08N9301 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Trans MOSFET N-CH 200V 62A 3-Pin(3+Tab) TO-220AB Rail - 598-FDP2614 - Utmel Electronic Limited
    Utmel Electronic Limited
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDP2614 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067017-FDP2614 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 260W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 62A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 99nC @ 10V Max Input Capacitance: 7230pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 27 mOhm @ 31A, 10V Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Limited Quantity per package: 800
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP2614 - 067017-FDP2614 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP2614
067017-FDP2614
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP2614 067017-FDP2614
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067017-FDP2614 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 260W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 62A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 99nC @ 10V Max Input Capacitance: 7230pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 27 mOhm @ 31A, 10V Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Limited Quantity per package: 800

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067017-FDP2614
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 260W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 62A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 99nC @ 10V
Max Input Capacitance: 7230pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 27 mOhm @ 31A, 10V
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Limited
Quantity per package: 800

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
N-Channel 200V MOSFET Transistor
2088-FDP2614
N-Channel 200V MOSFET Transistor 2088-FDP2614
MOSFETs 200V N-Channel PowerTrench Product overview: FDP2614 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 200V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDP2614 can be used for catalog matching and distributor lookup.

MOSFETs 200V N-Channel PowerTrench Product overview: FDP2614 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 200V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDP2614 can be used for catalog matching and distributor lookup.

Supplier's Site
Single FETs, MOSFETs - FDP2614FS-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDP2614FS-ND
Single FETs, MOSFETs FDP2614FS-ND
N-Channel 200V 62A (Tc) 260W (Tc) Through Hole TO-220-3

N-Channel 200V 62A (Tc) 260W (Tc) Through Hole TO-220-3

Buy Now Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
FDP2614
MOSFET FDP2614
MOSFET 200V N-Channel PowerTrench

MOSFET 200V N-Channel PowerTrench

Buy Now Datasheet
Mosfet, N Channel, 200V, 0.0229Ohm, 62A, To-220-3; Channel Type Onsemi - 08N9301 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Channel, 200V, 0.0229Ohm, 62A, To-220-3; Channel Type Onsemi
08N9301
Mosfet, N Channel, 200V, 0.0229Ohm, 62A, To-220-3; Channel Type Onsemi 08N9301
MOSFET, N CHANNEL, 200V, 0.0229OHM, 62A, TO-220-3; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:62A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Power Dissipation:260W; MSL:- RoHS Compliant: Yes

MOSFET, N CHANNEL, 200V, 0.0229OHM, 62A, TO-220-3; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:62A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Power Dissipation:260W; MSL:- RoHS Compliant: Yes

Supplier's Site
Trans MOSFET N-CH 200V 62A 3-Pin(3+Tab) TO-220AB Rail - 598-FDP2614 - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
Trans MOSFET N-CH 200V 62A 3-Pin(3+Tab) TO-220AB Rail
598-FDP2614
Trans MOSFET N-CH 200V 62A 3-Pin(3+Tab) TO-220AB Rail 598-FDP2614
Trans MOSFET N-CH 200V 62A 3-Pin(3+Tab) TO-220AB Rail

Trans MOSFET N-CH 200V 62A 3-Pin(3+Tab) TO-220AB Rail

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDP2614 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDP2614
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDP2614
MOSFET N-CH 200V 62A TO220-3

MOSFET N-CH 200V 62A TO220-3

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey VAST STOCK CO., LIMITED Newark, An Avnet Company Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 067017-FDP2614 2088-FDP2614 FDP2614FS-ND FDP2614 08N9301 598-FDP2614 FDP2614
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP2614 N-Channel 200V MOSFET Transistor Single FETs, MOSFETs MOSFET Mosfet, N Channel, 200V, 0.0229Ohm, 62A, To-220-3; Channel Type Onsemi Trans MOSFET N-CH 200V 62A 3-Pin(3+Tab) TO-220AB Rail Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel
V(BR)DSS 200 volts 200 volts
PD 260000 milliwatts 260 milliwatts 260000 milliwatts 260000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type TO-220; SOT3; TO-220-3 Tube TO-220; TO-220-3 TO-3; TO-220 TO-220; TO-220-3
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