MOSFETs 200V N-Channel PowerTrench Product overview: FDP2614 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 200V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDP2614 can be used for catalog matching and distributor lookup.
N-Channel 200V 62A (Tc) 260W (Tc) Through Hole TO-220-3
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067017-FDP2614
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 260W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 62A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 99nC @ 10V
Max Input Capacitance: 7230pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 27 mOhm @ 31A, 10V
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Limited
Quantity per package: 800
MOSFET, N CHANNEL, 200V, 0.0229OHM, 62A, TO-220-3; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:62A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Power Dissipation:260W; MSL:- RoHS Compliant: Yes
MOSFET N-CH 200V 62A TO220-3
Trans MOSFET N-CH 200V 62A 3-Pin(3+Tab) TO-220AB Rail
MOSFET 200V N-Channel PowerTrench
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 2088-FDP2614 | FDP2614FS-ND | 067017-FDP2614 | 08N9301 | FDP2614 | 598-FDP2614 | FDP2614 |
| Product Name | N-Channel 200V MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP2614 | Mosfet, N Channel, 200V, 0.0229Ohm, 62A, To-220-3; Channel Type Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Trans MOSFET N-CH 200V 62A 3-Pin(3+Tab) TO-220AB Rail | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |||
| MOSFET Operating Mode | Enhancement | Enhancement; ENHANCEMENT MODE | |||||
| PD | 260 milliwatts | 260000 milliwatts | 260000 milliwatts | 260000 milliwatts | |||
| Package Type | Tube | TO-220; TO-220-3 | TO-220; SOT3; TO-220-3 | TO-3; TO-220 | TO-220; TO-220-3 | ||
| Packing Method | Tube | Rail; Tube; Tube/Rail | Tube; Tube | Tube; Tube |
