onsemi Single FETs, MOSFETs FDP2614

Description
N-Channel 200V 62A (Tc) 260W (Tc) Through Hole TO-220-3
  • Single FETs, MOSFETs - FDP2614FS-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP2614 - 067017-FDP2614 - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDP2614 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Trans MOSFET N-CH 200V 62A 3-Pin(3+Tab) TO-220AB Rail - 598-FDP2614 - Utmel Electronic Limited
    Utmel Electronic Limited
  • Mosfet, N Channel, 200V, 0.0229Ohm, 62A, To-220-3; Channel Type Onsemi - 08N9301 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
N-Channel 200V 62A (Tc) 260W (Tc) Through Hole TO-220-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FDP2614FS-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDP2614FS-ND
Single FETs, MOSFETs FDP2614FS-ND
N-Channel 200V 62A (Tc) 260W (Tc) Through Hole TO-220-3

N-Channel 200V 62A (Tc) 260W (Tc) Through Hole TO-220-3

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP2614 - 067017-FDP2614 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP2614
067017-FDP2614
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP2614 067017-FDP2614
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067017-FDP2614 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 260W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 62A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 99nC @ 10V Max Input Capacitance: 7230pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 27 mOhm @ 31A, 10V Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Limited Quantity per package: 800

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067017-FDP2614
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 260W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 62A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 99nC @ 10V
Max Input Capacitance: 7230pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 27 mOhm @ 31A, 10V
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Limited
Quantity per package: 800

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
N-Channel 200V MOSFET Transistor
2088-FDP2614
N-Channel 200V MOSFET Transistor 2088-FDP2614
MOSFETs 200V N-Channel PowerTrench Product overview: FDP2614 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 200V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDP2614 can be used for catalog matching and distributor lookup.

MOSFETs 200V N-Channel PowerTrench Product overview: FDP2614 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 200V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDP2614 can be used for catalog matching and distributor lookup.

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDP2614 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDP2614
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDP2614
MOSFET N-CH 200V 62A TO220-3

MOSFET N-CH 200V 62A TO220-3

Supplier's Site
Trans MOSFET N-CH 200V 62A 3-Pin(3+Tab) TO-220AB Rail - 598-FDP2614 - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
Trans MOSFET N-CH 200V 62A 3-Pin(3+Tab) TO-220AB Rail
598-FDP2614
Trans MOSFET N-CH 200V 62A 3-Pin(3+Tab) TO-220AB Rail 598-FDP2614
Trans MOSFET N-CH 200V 62A 3-Pin(3+Tab) TO-220AB Rail

Trans MOSFET N-CH 200V 62A 3-Pin(3+Tab) TO-220AB Rail

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
FDP2614
MOSFET FDP2614
MOSFET 200V N-Channel PowerTrench

MOSFET 200V N-Channel PowerTrench

Buy Now Datasheet
Mosfet, N Channel, 200V, 0.0229Ohm, 62A, To-220-3; Channel Type Onsemi - 08N9301 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Channel, 200V, 0.0229Ohm, 62A, To-220-3; Channel Type Onsemi
08N9301
Mosfet, N Channel, 200V, 0.0229Ohm, 62A, To-220-3; Channel Type Onsemi 08N9301
MOSFET, N CHANNEL, 200V, 0.0229OHM, 62A, TO-220-3; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:62A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Power Dissipation:260W; MSL:- RoHS Compliant: Yes

MOSFET, N CHANNEL, 200V, 0.0229OHM, 62A, TO-220-3; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:62A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Power Dissipation:260W; MSL:- RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number FDP2614FS-ND 067017-FDP2614 2088-FDP2614 FDP2614 598-FDP2614 FDP2614 08N9301
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP2614 N-Channel 200V MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs Trans MOSFET N-CH 200V 62A 3-Pin(3+Tab) TO-220AB Rail MOSFET Mosfet, N Channel, 200V, 0.0229Ohm, 62A, To-220-3; Channel Type Onsemi
Polarity N-Channel N-Channel; N-Channel N-Channel N-Channel
Package Type TO-220; TO-220-3 TO-220; SOT3; TO-220-3 Tube TO-220; TO-220-3 TO-3; TO-220
V(BR)DSS 200 volts 200 volts
PD 260000 milliwatts 260 milliwatts 260000 milliwatts 260000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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