onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP2572 FDP2572

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 204117-FDP2572 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 135W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 150V Continuous Drain Current at 25°C: 4A (Ta), 29A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 34nC @ 10V Max Input Capacitance: 1770pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 54 mOhm @ 9A, 10V Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Limited
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP2572 - 204117-FDP2572 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - FDP2572FS-ND - DigiKey
    DigiKey
  • MOSFETs - 6714815 - RS Components, Ltd.
    RS Components, Ltd.
  • MOSFETs - 6714815P - RS Components, Ltd.
    RS Components, Ltd.
  • MOSFETs - 1461963 - RS Components, Ltd.
    RS Components, Ltd.
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDP2572 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • N Channel Mosfet, 150V, 29A, To-220Ab; Channel Type Onsemi - 28H9698 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 204117-FDP2572 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 135W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 150V Continuous Drain Current at 25°C: 4A (Ta), 29A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 34nC @ 10V Max Input Capacitance: 1770pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 54 mOhm @ 9A, 10V Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP2572 - 204117-FDP2572 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP2572
204117-FDP2572
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP2572 204117-FDP2572
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 204117-FDP2572 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 135W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 150V Continuous Drain Current at 25°C: 4A (Ta), 29A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 34nC @ 10V Max Input Capacitance: 1770pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 54 mOhm @ 9A, 10V Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Limited

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 204117-FDP2572
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 135W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 150V
Continuous Drain Current at 25°C: 4A (Ta), 29A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 34nC @ 10V
Max Input Capacitance: 1770pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 54 mOhm @ 9A, 10V
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - FDP2572FS-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDP2572FS-ND
Single FETs, MOSFETs FDP2572FS-ND
N-Channel 150V 4A (Ta), 29A (Tc) 135W (Tc) Through Hole TO-220-3

N-Channel 150V 4A (Ta), 29A (Tc) 135W (Tc) Through Hole TO-220-3

Buy Now Datasheet
MOSFETs - 6714815 - RS Components, Ltd.
RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
6714815
MOSFETs 6714815
MOSFET N-Channel 150V 4A TO220AB

MOSFET N-Channel 150V 4A TO220AB

Supplier's Site
MOSFETs - 6714815P - RS Components, Ltd.
RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
6714815P
MOSFETs 6714815P
MOSFET N-Channel 150V 4A TO220AB

MOSFET N-Channel 150V 4A TO220AB

Supplier's Site
MOSFETs - 1461963 - RS Components, Ltd.
RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1461963
MOSFETs 1461963
MOSFET N-Channel 150V 4A TO220AB

MOSFET N-Channel 150V 4A TO220AB

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDP2572 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDP2572
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDP2572
MOSFET N-CH 150V 4A/29A TO220-3

MOSFET N-CH 150V 4A/29A TO220-3

Supplier's Site
N Channel Mosfet, 150V, 29A, To-220Ab; Channel Type Onsemi - 28H9698 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 150V, 29A, To-220Ab; Channel Type Onsemi
28H9698
N Channel Mosfet, 150V, 29A, To-220Ab; Channel Type Onsemi 28H9698
N CHANNEL MOSFET, 150V, 29A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:29A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

N CHANNEL MOSFET, 150V, 29A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:29A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
FDP2572
MOSFET FDP2572
MOSFET TO-220 N-CH 150V 29A

MOSFET TO-220 N-CH 150V 29A

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey RS Components, Ltd. RS Components, Ltd. Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 204117-FDP2572 FDP2572FS-ND 6714815 6714815P FDP2572 28H9698 FDP2572
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP2572 Single FETs, MOSFETs MOSFETs MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs N Channel Mosfet, 150V, 29A, To-220Ab; Channel Type Onsemi MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel N-Channel
V(BR)DSS 150 volts
PD 135000 milliwatts
TJ -55 to 175 C (-67 to 347 F)
Package Type TO-220; SOT3; TO-220-3 TO-220; TO-220-3 TO-220; To-220ab TO-220; TO-220 TO-220; TO-220-3 TO-3; TO-220
Unlock Full Specs
to access all available technical data