MOSFET N-CH 500V 22A TO220-3
N-Channel 500V 22A (Tc) 312.5W (Tc) Through Hole TO-220-3
MOSFETs UniFETII 500V 22A Product overview: FDP22N50N from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 22A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 22A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDP22N50N can be used for catalog matching and distributor lookup.
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038315-FDP22N50N
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 312.5W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 22A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 65nC @ 10V
Max Input Capacitance: 3200pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 220 mOhm @ 11A, 10V
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Sufficient
Quantity per package: 1k pcs
MOSFET N-CH 500V 22A TO220-3
MOSFET, N-CH, 500V, 22A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:22A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.185ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power DissipationRoHS Compliant: Yes
| ODG (Origin Data Global) | DigiKey | ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | RS Components, Ltd. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FDP22N50N | FDP22N50N-ND | 2088-FDP22N50N | 7394860 | 7394860P | 1038315-FDP22N50N | FDP22N50N | 07AH3942 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | 500V 22A MOSFET Transistor | MOSFETs | MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP22N50N | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 500V, 22A, To-220; Transistor Polarity Onsemi |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||
| V(BR)DSS | 500 volts | 500 volts | ||||||
| IDSS | 22000 milliamps | 22000 milliamps | ||||||
| PD | 312500 milliwatts | 312 milliwatts | 312500 milliwatts |
