Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038312-FDP20AN06A0
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 90W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 9A (Ta), 45A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 19nC @ 10V
Max Input Capacitance: 950pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 20 mOhm @ 45A, 10V
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Sufficient
Power Field-Effect Transistor Product overview: FDP20AN06A0 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDP20AN06A0 can be used for catalog matching and distributor lookup.
N-Channel 60V 9A (Ta), 45A (Tc) 90W (Tc) Through Hole TO-220-3
DISCONTINUED BY MANUFACTURER, POWER FIELD-EFFECT TRANSISTOR, 45A I(D), 60V, 0.02OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB. FREE 2 YEAR RADWELL WARRANTY
MOSFET N-CH 60V 9A/45A TO220-3
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Radwell International | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | RF Transistors |
| Product Number | 1038312-FDP20AN06A0 | 278-FDP20AN06A0 | FDP20AN06A0-ND | 163606882 | FDP20AN06A0 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP20AN06A0 | MOSFET Transistor | Single FETs, MOSFETs | Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | ||
| V(BR)DSS | 60 volts | ||||
| PD | 90000 milliwatts | 90000 milliwatts | |||
| TJ | -55 to 175 C (-67 to 347 F) | -55 C (-67 F) |
