onsemi Single FETs, MOSFETs FDP19N40

Description
N-Channel 400V 19A (Tc) 215W (Tc) Through Hole TO-220-3
Request a Quote Datasheet
Description
N-Channel 400V 19A (Tc) 215W (Tc) Through Hole TO-220-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FDP19N40-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDP19N40-ND
Single FETs, MOSFETs FDP19N40-ND
N-Channel 400V 19A (Tc) 215W (Tc) Through Hole TO-220-3

N-Channel 400V 19A (Tc) 215W (Tc) Through Hole TO-220-3

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP19N40 - 204114-FDP19N40 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP19N40
204114-FDP19N40
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP19N40 204114-FDP19N40
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 204114-FDP19N40 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 215W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 400V Continuous Drain Current at 25°C: 19A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 40nC @ 10V Max Input Capacitance: 2115pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 240 mOhm @ 9.5A, 10V Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Balance Quantity per package: 1k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 204114-FDP19N40
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 215W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 400V
Continuous Drain Current at 25°C: 19A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 40nC @ 10V
Max Input Capacitance: 2115pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 240 mOhm @ 9.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Balance
Quantity per package: 1k pcs

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDP19N40 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDP19N40
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDP19N40
MOSFET N-CH 400V 19A TO220-3

MOSFET N-CH 400V 19A TO220-3

Supplier's Site
Sheung Wan, Hong Kong
MOSFET
FDP19N40
MOSFET FDP19N40
MOSFET UniFET, 400V

MOSFET UniFET, 400V

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number FDP19N40-ND 204114-FDP19N40 FDP19N40 FDP19N40
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP19N40 Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 TO-220; SOT3; TO-220-3 TO-220; TO-220-3
V(BR)DSS 400 volts
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