Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 204113-FDP18N50
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 235W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 18A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 60nC @ 10V
Max Input Capacitance: 2860pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 265 mOhm @ 9A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Balance
Quantity per package: 1k pcs
MOSFETs 500V N-Channel PowerTrench MOSFET Product overview: FDP18N50 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 500V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDP18N50 can be used for catalog matching and distributor lookup.
MOSFET N-CH 500V 18A TO220-3
N-Channel 500V 18A (Tc) 235W (Tc) Through Hole TO-220-3
MOSFET N-CH 500V 18A TO220-3
MOSFET N-CHANNEL 18A 500V TO220; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:18A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; MSL:- RoHS Compliant: Yes
POWER FIELD-EFFECT TRANSISTOR, 18A I(D), 500V, 0.265OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB. FREE 2 YEAR RADWELL WARRANTY
MOSFET 500V N-Channel PowerTrench MOSFET
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | RS Components, Ltd. | RS Components, Ltd. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Radwell International | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Bipolar RF Transistors | Bipolar RF Transistors | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 204113-FDP18N50 | 2088-FDP18N50 | FDP18N50 | 1867389 | 1867950P | FDP18N50-ND | FDP18N50 | 61M6289 | 26069085 | FDP18N50 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP18N50 | N-Channel 500V MOSFET Transistor | Single FETs, MOSFETs | Bipolar Transistors | Bipolar Transistors | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet N-Channel 18A 500V To220; Channel Type Onsemi | Transistor | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | |||||
| V(BR)DSS | 500 volts | 500 volts | ||||||||
| PD | 235000 milliwatts | 38.5 milliwatts | 235000 milliwatts | |||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | 150 C (302 F) | |||||||
| Package Type | TO-220; SOT3; TO-220-3 | Tube | TO-220; TO-220-3 | TO-220; To-220 | TO-220; TO-220 | TO-220; TO-220-3 | TO-220; TO-220-3 | TO-3 |
