MOSFET N-CH 500V 16A TO-220 Product overview: FDP16N50 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 16A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 16A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDP16N50 can be used for catalog matching and distributor lookup.
N-Channel 500V 16A (Tc) 200W (Tc) Through Hole TO-220-3
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038310-FDP16N50
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 200W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 16A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 45nC @ 10V
Max Input Capacitance: 1945pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 380 mOhm @ 8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Sufficient
MOSFET N-CH 500V 16A TO220-3
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-FDP16N50 | FDP16N50-ND | 1038310-FDP16N50 | FDP16N50 |
| Product Name | 500V 16A TO-220 MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP16N50 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | |
| PD | 200000 milliwatts | 200000 milliwatts | ||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) |