N-Channel 75V 9A (Ta), 58A (Tc) 135W (Tc) Through Hole TO-220-3
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038309-FDP16AN08A0
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 135W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 75V
Continuous Drain Current at 25°C: 9A (Ta), 58A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 42nC @ 10V
Max Input Capacitance: 1857pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 16 mOhm @ 58A, 10V
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Industrial, Communications & Networking, Computers & Computer Peripherals
Quantity per package: 800
N-Channel MOSFET 75V 58A 16mR TO-220AB Product overview: FDP16AN08A0 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 75V, 58A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 75V, 58A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDP16AN08A0 can be used for catalog matching and distributor lookup.
MOSFET N-CH 75V 9A/58A TO220-3
POWER FIELD-EFFECT TRANSISTOR, 9A I(D), 75V, 0.016OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB. FREE 2 YEAR RADWELL WARRANTY
MOSFET 75V 58a 0.016 Ohms/VGS=10V
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | Radwell International | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FDP16AN08A0FS-ND | 1038309-FDP16AN08A0 | 278-FDP16AN08A0 | FDP16AN08A0 | 218666428 | FDP16AN08A0 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP16AN08A0 | N-Channel 75V 58A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Transistor | MOSFET |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | |||
| Package Type | TO-220; TO-220-3 | TO-220; SOT3; TO-220-3 | TO-220; TO-220-3 | |||
| V(BR)DSS | 75 volts |
