MOSFET N-CH 100V 50A TO220-3
Manufacturer: ON Semiconductor
Win Source Part Number: 1173870-FDP150N10A
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Homepage: www.fairchildsemi.co
Manufacturer Package: TO-220-3
Power Dissipation (Maximum): 91W
Popularity: Medium
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 100V
Id - Continuous Drain Current: 50A
Rds On (Maximum) at Id, Vgs: 15mOhm at 50A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 21nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 1440pF at 50V
N-Channel 100V 50A (Tc) 91W (Tc) Through Hole TO-220-3
MOSFET N-CH 100V 50A TO220-3
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | FDP150N10A | 1173870-FDP150N10A | FDP150N10A-ND | FDP150N10A |
| Product Name | Single FETs, MOSFETs | FETs - Single - FDP150N10A | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | |
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||
| V(BR)DSS | 100 volts | 100 volts | ||
| IDSS | 50000 milliamps |
