MOSFET N-CH 100V 57A TO220-3
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016117-FDP150N10
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 110W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 57A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 69nC @ 10V
Max Input Capacitance: 4760pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 15 mOhm @ 49A, 10V
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Balance
Quantity per package: 800
N-Channel 100V 57A (Tc) 110W (Tc) Through Hole TO-220-3
MOSFET N-CH 100V 57A TO220-3
MOSFET 100V N-Channel PowerTrench
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FDP150N10 | 016117-FDP150N10 | FDP150N10-ND | FDP150N10 | FDP150N10 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP150N10 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||
| V(BR)DSS | 100 volts | 100 volts | |||
| IDSS | 57000 milliamps |
