onsemi Single FETs, MOSFETs FDP14AN06LA0

Description
N-Channel 60V 10A (Ta), 67A (Tc) 125W (Tc) Through Hole TO-220-3
Request a Quote Datasheet
Description
N-Channel 60V 10A (Ta), 67A (Tc) 125W (Tc) Through Hole TO-220-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FDP14AN06LA0-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDP14AN06LA0-ND
Single FETs, MOSFETs FDP14AN06LA0-ND
N-Channel 60V 10A (Ta), 67A (Tc) 125W (Tc) Through Hole TO-220-3

N-Channel 60V 10A (Ta), 67A (Tc) 125W (Tc) Through Hole TO-220-3

Buy Now Datasheet
Singapore
60V 10A 67A TO220 MOSFET Transistor
278-FDP14AN06LA0
60V 10A 67A TO220 MOSFET Transistor 278-FDP14AN06LA0
MOSFET N-CH 60V 10A/67A TO220-3 Product overview: FDP14AN06LA0 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 10A, 67A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 10A, 67A, TO220, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDP14AN06LA0 can be used for catalog matching and distributor lookup.

MOSFET N-CH 60V 10A/67A TO220-3 Product overview: FDP14AN06LA0 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 10A, 67A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 10A, 67A, TO220, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDP14AN06LA0 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP14AN06LA0 - 1038307-FDP14AN06LA0 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP14AN06LA0
1038307-FDP14AN06LA0
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP14AN06LA0 1038307-FDP14AN06LA0
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038307-FDP14AN06LA0 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 125W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 10A (Ta), 67A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 31nC @ 5V Max Input Capacitance: 2900pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 11.6 mOhm @ 67A, 10V Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Sufficient

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038307-FDP14AN06LA0
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 125W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 10A (Ta), 67A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 31nC @ 5V
Max Input Capacitance: 2900pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 11.6 mOhm @ 67A, 10V
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDP14AN06LA0 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDP14AN06LA0
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDP14AN06LA0
MOSFET N-CH 60V 10A/67A TO220-3

MOSFET N-CH 60V 10A/67A TO220-3

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FDP14AN06LA0-ND 278-FDP14AN06LA0 1038307-FDP14AN06LA0 FDP14AN06LA0
Product Name Single FETs, MOSFETs 60V 10A 67A TO220 MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP14AN06LA0 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 Tube TO-220; SOT3; TO-220AB TO-220; TO-220-3
Transistor Grade / Operating Range Automotive
PD 125000 milliwatts 125000 milliwatts
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