onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP12N60NZ FDP12N60NZ

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 204110-FDP12N60NZ Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 240W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 12A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 34nC @ 10V Max Input Capacitance: 1676pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 650 mOhm @ 6A, 10V Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Limited Quantity per package: 1k pcs
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP12N60NZ - 204110-FDP12N60NZ - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - FDP12N60NZOS-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - FDP12N60NZ - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - FDP12N60NZ - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Mosfet,n Channel,600V,12A,to220; Channel Type Onsemi - 41T0495 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Transistor - 38463106 - Radwell International
    Radwell International
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDP12N60NZ - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 204110-FDP12N60NZ Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 240W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 12A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 34nC @ 10V Max Input Capacitance: 1676pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 650 mOhm @ 6A, 10V Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Limited Quantity per package: 1k pcs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP12N60NZ - 204110-FDP12N60NZ - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP12N60NZ
204110-FDP12N60NZ
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP12N60NZ 204110-FDP12N60NZ
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 204110-FDP12N60NZ Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 240W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 12A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 34nC @ 10V Max Input Capacitance: 1676pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 650 mOhm @ 6A, 10V Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Limited Quantity per package: 1k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 204110-FDP12N60NZ
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 240W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 12A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 34nC @ 10V
Max Input Capacitance: 1676pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 650 mOhm @ 6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Limited
Quantity per package: 1k pcs

Buy Now Datasheet
Single FETs, MOSFETs - FDP12N60NZOS-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDP12N60NZOS-ND
Single FETs, MOSFETs FDP12N60NZOS-ND
N-Channel 600V 12A (Tc) 240W (Tc) Through Hole TO-220-3

N-Channel 600V 12A (Tc) 240W (Tc) Through Hole TO-220-3

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
N-Channel 600V 12A TO-220 MOSFET Transistor
278-FDP12N60NZ
N-Channel 600V 12A TO-220 MOSFET Transistor 278-FDP12N60NZ
600V 12A N-Channel Power MOSFET TO-220 Product overview: FDP12N60NZ from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600V, 12A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 12A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDP12N60NZ can be used for catalog matching and distributor lookup.

600V 12A N-Channel Power MOSFET TO-220 Product overview: FDP12N60NZ from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600V, 12A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 12A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDP12N60NZ can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - FDP12N60NZ - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDP12N60NZ
Single FETs, MOSFETs FDP12N60NZ
MOSFET N-CH 600V 12A TO220-3

MOSFET N-CH 600V 12A TO220-3

Supplier's Site Datasheet
Single FETs, MOSFETs - FDP12N60NZ - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDP12N60NZ
Single FETs, MOSFETs FDP12N60NZ
POWER FIELD-EFFECT TRANSISTOR, 1

POWER FIELD-EFFECT TRANSISTOR, 1

Supplier's Site Datasheet
Mosfet,n Channel,600V,12A,to220; Channel Type Onsemi - 41T0495 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet,n Channel,600V,12A,to220; Channel Type Onsemi
41T0495
Mosfet,n Channel,600V,12A,to220; Channel Type Onsemi 41T0495
MOSFET,N CHANNEL,600V,12A,TO2 20; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:12A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; MSL:- RoHS Compliant: Yes

MOSFET,N CHANNEL,600V,12A,TO220; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:12A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; MSL:- RoHS Compliant: Yes

Supplier's Site
Transistor - 38463106 - Radwell International
Radwell International
Willingboro, NJ, United States
Transistor
38463106
Transistor 38463106
MOSFET,N CHANNEL,600V,12A,TO2 20, TRANSISTOR POLARITY:N CHANNEL, DRAIN SOURCE VOLTAGE VDS:600V, CONTINUOUS DRAIN CURRENT ID:12A, ON RESISTANCE RDS(ON):0.53OHM, TRANSISTOR MOUNTING:THROUGH HOLE, RDS(ON) TEST VOLTAGE VGS:10V, MSL:- ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

MOSFET,N CHANNEL,600V,12A,TO220, TRANSISTOR POLARITY:N CHANNEL, DRAIN SOURCE VOLTAGE VDS:600V, CONTINUOUS DRAIN CURRENT ID:12A, ON RESISTANCE RDS(ON):0.53OHM, TRANSISTOR MOUNTING:THROUGH HOLE, RDS(ON) TEST VOLTAGE VGS:10V, MSL:- ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
FDP12N60NZ
MOSFET FDP12N60NZ
MOSFET 600V N-Chan MOSFET UniFET-II

MOSFET 600V N-Chan MOSFET UniFET-II

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDP12N60NZ - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDP12N60NZ
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDP12N60NZ
MOSFET N-CH 600V 12A TO220-3

MOSFET N-CH 600V 12A TO220-3

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) Newark, An Avnet Company Radwell International VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 204110-FDP12N60NZ FDP12N60NZOS-ND 278-FDP12N60NZ FDP12N60NZ 41T0495 38463106 FDP12N60NZ FDP12N60NZ
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP12N60NZ Single FETs, MOSFETs N-Channel 600V 12A TO-220 MOSFET Transistor Single FETs, MOSFETs Mosfet,n Channel,600V,12A,to220; Channel Type Onsemi Transistor MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 600 volts 600 volts
PD 240000 milliwatts 240000 milliwatts 240000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 C (-67 F) -55 to 150 C (-67 to 302 F)
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