500V N-Channel MOSFET, 11.5A, 650mR, TO-220 Product overview: FDP12N50 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 500V, 11.5A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 11.5A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDP12N50 can be used for catalog matching and distributor lookup.
N-Channel 500V 11.5A (Tc) 165W (Tc) Through Hole TO-220-3
Manufacturer: ON Semiconductor
Win Source Part Number: 1173868-FDP12N50
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.fairchildsemi.co
Manufacturer Package: TO-220-3
Power Dissipation (Maximum): 165W
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1,000
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 500V
Id - Continuous Drain Current: 11.5A
Rds On (Maximum) at Id, Vgs: 650mOhm at 6A, 10V
Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 30nC at 10V
Gate Source Voltage (Maximum): ±30V
Input Capacitance (Ciss) (Maximum) at Vds: 1315pF at 25V
MOSFET N-CH 500V 11.5A TO220-3
MOSFET, N-CH, 500V, 11.5A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:11.5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-FDP12N50 | FDP12N50-ND | 1173868-FDP12N50 | FDP12N50 | FDP12N50 | 78M0956 |
| Product Name | N-Channel 500V 11.5A TO-220 MOSFET Transistor | Single FETs, MOSFETs | FETs - Single - FDP12N50 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 500V, 11.5A, To-220; Channel Type Onsemi |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | |||
| PD | 165000 milliwatts | 165000 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | ||||
| Package Type | TO-220; TO-220-3 | TO-220; SOT3 | TO-220; TO-220-3 | TO-3; TO-220 |
