Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 040265-FDP120N10
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 170W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 74A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 86nC @ 10V
Max Input Capacitance: 5605pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 12 mOhm @ 74A, 10V
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Balance
Quantity per package: 800
MOSFETs N Chan 100V 12Mohm Product overview: FDP120N10 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 12Mohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 12Mohm, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDP120N10 can be used for catalog matching and distributor lookup.
N-Channel 100V 74A (Tc) 170W (Tc) Through Hole TO-220-3
MOSFET N-CH 100V 74A TO220-3
POWER FIELD-EFFECT TRANSISTOR, 7
MOSFET N-CH 100V 74A TO220-3
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 040265-FDP120N10 | 2088-FDP120N10 | FDP120N10-ND | FDP120N10 | FDP120N10 | FDP120N10 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP120N10 | 100V 12Mohm MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | ||
| V(BR)DSS | 100 volts | 100 volts | ||||
| PD | 170000 milliwatts | 170 milliwatts | 170000 milliwatts | |||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | ||||
| Package Type | TO-220; SOT3; TO-220-3 | Tube | TO-220; TO-220-3 | TO-220; TO-220-3 | TO-220; TO-220-3 |
