onsemi Single FETs, MOSFETs FDP10AN06A0

Description
N-Channel 60V 12A (Ta), 75A (Tc) 135W (Tc) Through Hole TO-220-3
Request a Quote Datasheet
Description
N-Channel 60V 12A (Ta), 75A (Tc) 135W (Tc) Through Hole TO-220-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FDP10AN06A0-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDP10AN06A0-ND
Single FETs, MOSFETs FDP10AN06A0-ND
N-Channel 60V 12A (Ta), 75A (Tc) 135W (Tc) Through Hole TO-220-3

N-Channel 60V 12A (Ta), 75A (Tc) 135W (Tc) Through Hole TO-220-3

Buy Now Datasheet
Singapore
60V 12A 75A TO220 MOSFET Transistor
278-FDP10AN06A0
60V 12A 75A TO220 MOSFET Transistor 278-FDP10AN06A0
MOSFET N-CH 60V 12A/75A TO220-3 Product overview: FDP10AN06A0 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 12A, 75A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 12A, 75A, TO220, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDP10AN06A0 can be used for catalog matching and distributor lookup.

MOSFET N-CH 60V 12A/75A TO220-3 Product overview: FDP10AN06A0 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 12A, 75A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 12A, 75A, TO220, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDP10AN06A0 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP10AN06A0 - 1038304-FDP10AN06A0 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP10AN06A0
1038304-FDP10AN06A0
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP10AN06A0 1038304-FDP10AN06A0
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038304-FDP10AN06A0 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 135W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 12A (Ta), 75A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 37nC @ 10V Max Input Capacitance: 1840pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 10.5 mOhm @ 75A, 10V Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Sufficient

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038304-FDP10AN06A0
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 135W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 12A (Ta), 75A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 37nC @ 10V
Max Input Capacitance: 1840pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 10.5 mOhm @ 75A, 10V
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDP10AN06A0 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDP10AN06A0
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDP10AN06A0
MOSFET N-CH 60V 12A/75A TO220-3

MOSFET N-CH 60V 12A/75A TO220-3

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FDP10AN06A0-ND 278-FDP10AN06A0 1038304-FDP10AN06A0 FDP10AN06A0
Product Name Single FETs, MOSFETs 60V 12A 75A TO220 MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP10AN06A0 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 Tube TO-220; SOT3; TO-220AB TO-220; TO-220-3
Transistor Grade / Operating Range Automotive
PD 135000 milliwatts 135000 milliwatts
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