onsemi Single FETs, MOSFETs FDP090N10

Description
MOSFET N-CH 100V 75A TO220-3
Request a Quote Datasheet
Description
MOSFET N-CH 100V 75A TO220-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FDP090N10 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDP090N10
Single FETs, MOSFETs FDP090N10
MOSFET N-CH 100V 75A TO220-3

MOSFET N-CH 100V 75A TO220-3

Supplier's Site Datasheet
Single FETs, MOSFETs - FDP090N10-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDP090N10-ND
Single FETs, MOSFETs FDP090N10-ND
N-Channel 100V 75A (Tc) 208W (Tc) Through Hole TO-220-3

N-Channel 100V 75A (Tc) 208W (Tc) Through Hole TO-220-3

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP090N10 - 067015-FDP090N10 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP090N10
067015-FDP090N10
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP090N10 067015-FDP090N10
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067015-FDP090N10 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 208W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 75A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 116nC @ 10V Max Input Capacitance: 8225pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 9 mOhm @ 75A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Balance Quantity per package: 800

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067015-FDP090N10
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 208W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 75A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 116nC @ 10V
Max Input Capacitance: 8225pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 9 mOhm @ 75A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Balance
Quantity per package: 800

Buy Now Datasheet
Singapore
100V 75A MOSFET Transistor
2088-FDP090N10
100V 75A MOSFET Transistor 2088-FDP090N10
MOSFETs 100V 75A N-Chan PowerTrench Product overview: FDP090N10 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 75A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 75A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDP090N10 can be used for catalog matching and distributor lookup.

MOSFETs 100V 75A N-Chan PowerTrench Product overview: FDP090N10 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 75A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 75A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDP090N10 can be used for catalog matching and distributor lookup.

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDP090N10 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDP090N10
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDP090N10
MOSFET N-CH 100V 75A TO220-3

MOSFET N-CH 100V 75A TO220-3

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 100V 75A N-Chan PowerTrench

MOSFET 100V 75A N-Chan PowerTrench

Buy Now Datasheet

Technical Specifications

  ODG (Origin Data Global) DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number FDP090N10 FDP090N10-ND 067015-FDP090N10 2088-FDP090N10 FDP090N10 FDP090N10
Product Name Single FETs, MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP090N10 100V 75A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 100 volts 100 volts
IDSS 75000 milliamps
PD 208000 milliwatts 208000 milliwatts 208 milliwatts
Unlock Full Specs
to access all available technical data

Similar Products

Discrete Semiconductor Products - Transistors - FETs, MOSFETs - AUIRFZ44NSTRL - Shenzhen Shengyu Electronics Technology Limited
Specs
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packing Method Bulk; Bulk
View Details
2 suppliers