onsemi Single FETs, MOSFETs FDP070AN06A0

Description
N-Channel 60V 15A (Ta), 80A (Tc) 175W (Tc) Through Hole TO-220-3
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Description
N-Channel 60V 15A (Ta), 80A (Tc) 175W (Tc) Through Hole TO-220-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FDP070AN06A0-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDP070AN06A0-ND
Single FETs, MOSFETs FDP070AN06A0-ND
N-Channel 60V 15A (Ta), 80A (Tc) 175W (Tc) Through Hole TO-220-3

N-Channel 60V 15A (Ta), 80A (Tc) 175W (Tc) Through Hole TO-220-3

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP070AN06A0 - 204108-FDP070AN06A0 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP070AN06A0
204108-FDP070AN06A0
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP070AN06A0 204108-FDP070AN06A0
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 204108-FDP070AN06A0 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 175W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 15A (Ta), 80A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 66nC @ 10V Max Input Capacitance: 3000pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 7 mOhm @ 80A, 10V Popularity: Medium Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 204108-FDP070AN06A0
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 175W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 15A (Ta), 80A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 66nC @ 10V
Max Input Capacitance: 3000pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 7 mOhm @ 80A, 10V
Popularity: Medium
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Balance

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Sheung Wan, Hong Kong
MOSFET N-Channel PwrTrench

MOSFET N-Channel PwrTrench

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N Channel Mosfet, 60V, 80A To-220Ab; Channel Type Onsemi - 84H4568 - Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 60V, 80A To-220Ab; Channel Type Onsemi
84H4568
N Channel Mosfet, 60V, 80A To-220Ab; Channel Type Onsemi 84H4568
N CHANNEL MOSFET, 60V, 80A TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:80A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

N CHANNEL MOSFET, 60V, 80A TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:80A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDP070AN06A0 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDP070AN06A0
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDP070AN06A0
MOSFET N-CH 60V 15A/80A TO220-3

MOSFET N-CH 60V 15A/80A TO220-3

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FDP070AN06A0-ND 204108-FDP070AN06A0 FDP070AN06A0 84H4568 FDP070AN06A0
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP070AN06A0 MOSFET N Channel Mosfet, 60V, 80A To-220Ab; Channel Type Onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel
Package Type TO-220; TO-220-3 TO-220; SOT3; TO-220AB TO-3; TO-220 TO-220; TO-220-3
V(BR)DSS 60 volts
PD 175000 milliwatts
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