onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP070AN06A0 FDP070AN06A0

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 204108-FDP070AN06A0 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 175W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 15A (Ta), 80A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 66nC @ 10V Max Input Capacitance: 3000pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 7 mOhm @ 80A, 10V Popularity: Medium Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 204108-FDP070AN06A0 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 175W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 15A (Ta), 80A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 66nC @ 10V Max Input Capacitance: 3000pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 7 mOhm @ 80A, 10V Popularity: Medium Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP070AN06A0 - 204108-FDP070AN06A0 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP070AN06A0
204108-FDP070AN06A0
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP070AN06A0 204108-FDP070AN06A0
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 204108-FDP070AN06A0 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 175W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 15A (Ta), 80A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 66nC @ 10V Max Input Capacitance: 3000pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 7 mOhm @ 80A, 10V Popularity: Medium Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 204108-FDP070AN06A0
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 175W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 15A (Ta), 80A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 66nC @ 10V
Max Input Capacitance: 3000pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 7 mOhm @ 80A, 10V
Popularity: Medium
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - FDP070AN06A0-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDP070AN06A0-ND
Single FETs, MOSFETs FDP070AN06A0-ND
N-Channel 60V 15A (Ta), 80A (Tc) 175W (Tc) Through Hole TO-220-3

N-Channel 60V 15A (Ta), 80A (Tc) 175W (Tc) Through Hole TO-220-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDP070AN06A0 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDP070AN06A0
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDP070AN06A0
MOSFET N-CH 60V 15A/80A TO220-3

MOSFET N-CH 60V 15A/80A TO220-3

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-Channel PwrTrench

MOSFET N-Channel PwrTrench

Buy Now Datasheet
N Channel Mosfet, 60V, 80A To-220Ab; Channel Type Onsemi - 84H4568 - Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 60V, 80A To-220Ab; Channel Type Onsemi
84H4568
N Channel Mosfet, 60V, 80A To-220Ab; Channel Type Onsemi 84H4568
N CHANNEL MOSFET, 60V, 80A TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:80A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

N CHANNEL MOSFET, 60V, 80A TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:80A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 204108-FDP070AN06A0 FDP070AN06A0-ND FDP070AN06A0 FDP070AN06A0 84H4568
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP070AN06A0 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET N Channel Mosfet, 60V, 80A To-220Ab; Channel Type Onsemi
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 60 volts
PD 175000 milliwatts
TJ -55 to 175 C (-67 to 347 F)
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