onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP060AN08A0 FDP060AN08A0

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067014-FDP060AN08A0 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 255W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 75V Continuous Drain Current at 25°C: 16A (Ta), 80A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 95nC @ 10V Max Input Capacitance: 5150pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 6 mOhm @ 80A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Balance Quantity per package: 800
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP060AN08A0 - 067014-FDP060AN08A0 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - FDP060AN08A0-ND - DigiKey
    DigiKey
  • N Channel Mosfet, 75V, 80A To-220Ab; Channel Type Onsemi - 50H4199 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDP060AN08A0 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Single FETs, MOSFETs - FDP060AN08A0 - ODG (Origin Data Global)
    ODG (Origin Data Global)
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067014-FDP060AN08A0 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 255W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 75V Continuous Drain Current at 25°C: 16A (Ta), 80A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 95nC @ 10V Max Input Capacitance: 5150pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 6 mOhm @ 80A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Balance Quantity per package: 800
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP060AN08A0 - 067014-FDP060AN08A0 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP060AN08A0
067014-FDP060AN08A0
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP060AN08A0 067014-FDP060AN08A0
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067014-FDP060AN08A0 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 255W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 75V Continuous Drain Current at 25°C: 16A (Ta), 80A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 95nC @ 10V Max Input Capacitance: 5150pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 6 mOhm @ 80A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Balance Quantity per package: 800

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067014-FDP060AN08A0
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 255W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 75V
Continuous Drain Current at 25°C: 16A (Ta), 80A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 95nC @ 10V
Max Input Capacitance: 5150pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 6 mOhm @ 80A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Balance
Quantity per package: 800

Buy Now Datasheet
Single FETs, MOSFETs - FDP060AN08A0-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDP060AN08A0-ND
Single FETs, MOSFETs FDP060AN08A0-ND
N-Channel 75V 16A (Ta), 80A (Tc) 255W (Tc) Through Hole TO-220-3

N-Channel 75V 16A (Ta), 80A (Tc) 255W (Tc) Through Hole TO-220-3

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
75V 80a 1V MOSFET Transistor
2088-FDP060AN08A0
75V 80a 1V MOSFET Transistor 2088-FDP060AN08A0
MOSFETs 75V 80a .6Ohms/VGS=1V Product overview: FDP060AN08A0 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 75V, 80a, 1V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 75V, 80a, 1V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDP060AN08A0 can be used for catalog matching and distributor lookup.

MOSFETs 75V 80a .6Ohms/VGS=1V Product overview: FDP060AN08A0 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 75V, 80a, 1V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 75V, 80a, 1V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDP060AN08A0 can be used for catalog matching and distributor lookup.

Supplier's Site
N Channel Mosfet, 75V, 80A To-220Ab; Channel Type Onsemi - 50H4199 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 75V, 80A To-220Ab; Channel Type Onsemi
50H4199
N Channel Mosfet, 75V, 80A To-220Ab; Channel Type Onsemi 50H4199
N CHANNEL MOSFET, 75V, 80A TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:75V; Continuous Drain Current Id:80A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

N CHANNEL MOSFET, 75V, 80A TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:75V; Continuous Drain Current Id:80A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDP060AN08A0 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDP060AN08A0
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDP060AN08A0
MOSFET N-CH 75V 16A/80A TO220-3

MOSFET N-CH 75V 16A/80A TO220-3

Supplier's Site
Single FETs, MOSFETs - FDP060AN08A0 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDP060AN08A0
Single FETs, MOSFETs FDP060AN08A0
MOSFET N-CH 75V 16A/80A TO220-3

MOSFET N-CH 75V 16A/80A TO220-3

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited ODG (Origin Data Global)
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 067014-FDP060AN08A0 FDP060AN08A0-ND 2088-FDP060AN08A0 50H4199 FDP060AN08A0 FDP060AN08A0
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP060AN08A0 Single FETs, MOSFETs 75V 80a 1V MOSFET Transistor N Channel Mosfet, 75V, 80A To-220Ab; Channel Type Onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs Single FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel N-Channel; N-Channel
V(BR)DSS 75 volts 75 volts
PD 255000 milliwatts 255 milliwatts 255000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
Package Type TO-220; SOT3; TO-220-3 TO-220; TO-220-3 Tube TO-3; TO-220 TO-220; TO-220-3 TO-220; TO-220-3
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