onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP047N08 FDP047N08

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 204107-FDP047N08 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 268W (Tc) Family Name: FDP047N08 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 75V Continuous Drain Current at 25°C: 164A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 152nC @ 10V Max Input Capacitance: 9415pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 4.7 mOhm @ 80A, 10V Alternative Parts (Cross-Reference): AOT400; BUK655R0-75C; BUK754R3-75C; BUK9506-75B; Introduction Date: September 14, 2004 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Balance Quantity per package: 800
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 204107-FDP047N08 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 268W (Tc) Family Name: FDP047N08 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 75V Continuous Drain Current at 25°C: 164A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 152nC @ 10V Max Input Capacitance: 9415pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 4.7 mOhm @ 80A, 10V Alternative Parts (Cross-Reference): AOT400; BUK655R0-75C; BUK754R3-75C; BUK9506-75B; Introduction Date: September 14, 2004 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Balance Quantity per package: 800
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP047N08 - 204107-FDP047N08 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP047N08
204107-FDP047N08
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP047N08 204107-FDP047N08
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 204107-FDP047N08 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 268W (Tc) Family Name: FDP047N08 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 75V Continuous Drain Current at 25°C: 164A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 152nC @ 10V Max Input Capacitance: 9415pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 4.7 mOhm @ 80A, 10V Alternative Parts (Cross-Reference): AOT400; BUK655R0-75C; BUK754R3-75C; BUK9506-75B; Introduction Date: September 14, 2004 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Balance Quantity per package: 800

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 204107-FDP047N08
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 268W (Tc)
Family Name: FDP047N08
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 75V
Continuous Drain Current at 25°C: 164A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 152nC @ 10V
Max Input Capacitance: 9415pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 4.7 mOhm @ 80A, 10V
Alternative Parts (Cross-Reference): AOT400; BUK655R0-75C; BUK754R3-75C; BUK9506-75B;
Introduction Date: September 14, 2004
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Balance
Quantity per package: 800

Buy Now Datasheet
Single FETs, MOSFETs - FDP047N08 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDP047N08
Single FETs, MOSFETs FDP047N08
MOSFET N-CH 75V 164A TO220-3

MOSFET N-CH 75V 164A TO220-3

Supplier's Site Datasheet
Single FETs, MOSFETs - FDP047N08-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDP047N08-ND
Single FETs, MOSFETs FDP047N08-ND
N-Channel 75V 164A (Tc) 268W (Tc) Through Hole TO-220-3

N-Channel 75V 164A (Tc) 268W (Tc) Through Hole TO-220-3

Buy Now Datasheet
Singapore
N-Channel 75V MOSFET Transistor
2088-FDP047N08
N-Channel 75V MOSFET Transistor 2088-FDP047N08
MOSFETs 75V N-Channel PowerTrench Product overview: FDP047N08 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 75V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 75V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDP047N08 can be used for catalog matching and distributor lookup.

MOSFETs 75V N-Channel PowerTrench Product overview: FDP047N08 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 75V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 75V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDP047N08 can be used for catalog matching and distributor lookup.

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDP047N08 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDP047N08
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDP047N08
MOSFET N-CH 75V 164A TO220-3

MOSFET N-CH 75V 164A TO220-3

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 75V N-Channel PowerTrench

MOSFET 75V N-Channel PowerTrench

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 204107-FDP047N08 FDP047N08 FDP047N08-ND 2088-FDP047N08 FDP047N08 FDP047N08
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP047N08 Single FETs, MOSFETs Single FETs, MOSFETs N-Channel 75V MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 75 volts 75 volts
PD 268000 milliwatts 268000 milliwatts 268 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
Package Type TO-220; SOT3; TO-220-3 TO-220; TO-220-3 TO-220; TO-220-3 Tube TO-220; TO-220-3
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