onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP047N08 FDP047N08

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 204107-FDP047N08
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 268W (Tc)
Family Name: FDP047N08
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 75V
Continuous Drain Current at 25°C: 164A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 152nC @ 10V
Max Input Capacitance: 9415pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 4.7 mOhm @ 80A, 10V
Alternative Parts (Cross-Reference): AOT400; BUK655R0-75C; BUK754R3-75C; BUK9506-75B;
Introduction Date: September 14, 2004
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Balance
Quantity per package: 800

N-Channel 75V 164A (Tc) 268W (Tc) Through Hole TO-220-3

MOSFET N-CH 75V 164A TO220-3