onsemi Single FETs, MOSFETs FDP047AN08A0

Description
MOSFET N-CH 75V 15A TO220-3
  • Single FETs, MOSFETs - FDP047AN08A0 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - FDP047AN08A0FS-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP047AN08A0 - 016116-FDP047AN08A0 - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDP047AN08A0 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • N Channel Mosfet, 75V, 80A To-220Ab; Channel Type Onsemi - 28H9692 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
MOSFET N-CH 75V 15A TO220-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FDP047AN08A0 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDP047AN08A0
Single FETs, MOSFETs FDP047AN08A0
MOSFET N-CH 75V 15A TO220-3

MOSFET N-CH 75V 15A TO220-3

Supplier's Site Datasheet
Single FETs, MOSFETs - FDP047AN08A0FS-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDP047AN08A0FS-ND
Single FETs, MOSFETs FDP047AN08A0FS-ND
N-Channel 75V 15A (Tc) 310W (Tc) Through Hole TO-220-3

N-Channel 75V 15A (Tc) 310W (Tc) Through Hole TO-220-3

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP047AN08A0 - 016116-FDP047AN08A0 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP047AN08A0
016116-FDP047AN08A0
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP047AN08A0 016116-FDP047AN08A0
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016116-FDP047AN08A0 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 310W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Not For New Designs Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 75V Continuous Drain Current at 25°C: 15A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 138nC @ 10V Max Input Capacitance: 6600pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 4.7 mOhm @ 80A, 10V Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Limited Quantity per package: 800

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016116-FDP047AN08A0
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 310W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Not For New Designs
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 75V
Continuous Drain Current at 25°C: 15A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 138nC @ 10V
Max Input Capacitance: 6600pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 4.7 mOhm @ 80A, 10V
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Limited
Quantity per package: 800

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDP047AN08A0 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDP047AN08A0
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDP047AN08A0
MOSFET N-CH 75V 15A TO220-3

MOSFET N-CH 75V 15A TO220-3

Supplier's Site
N Channel Mosfet, 75V, 80A To-220Ab; Channel Type Onsemi - 28H9692 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 75V, 80A To-220Ab; Channel Type Onsemi
28H9692
N Channel Mosfet, 75V, 80A To-220Ab; Channel Type Onsemi 28H9692
N CHANNEL MOSFET, 75V, 80A TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:75V; Continuous Drain Current Id:80A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

N CHANNEL MOSFET, 75V, 80A TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:75V; Continuous Drain Current Id:80A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
FDP047AN08A0
MOSFET FDP047AN08A0
MOSFET 75V N-Ch PowerTrench

MOSFET 75V N-Ch PowerTrench

Buy Now Datasheet

Technical Specifications

  ODG (Origin Data Global) DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number FDP047AN08A0 FDP047AN08A0FS-ND 016116-FDP047AN08A0 FDP047AN08A0 28H9692 FDP047AN08A0
Product Name Single FETs, MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP047AN08A0 Discrete Semiconductor Products - Transistors - FETs, MOSFETs N Channel Mosfet, 75V, 80A To-220Ab; Channel Type Onsemi MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 75 volts 75 volts
IDSS 15000 milliamps 80000 milliamps
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