onsemi Single FETs, MOSFETs FDP047AN08A0

Description
N-Channel 75V 15A (Tc) 310W (Tc) Through Hole TO-220-3
  • Single FETs, MOSFETs - FDP047AN08A0FS-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP047AN08A0 - 016116-FDP047AN08A0 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - FDP047AN08A0 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDP047AN08A0 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • N Channel Mosfet, 75V, 80A To-220Ab; Channel Type Onsemi - 28H9692 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
N-Channel 75V 15A (Tc) 310W (Tc) Through Hole TO-220-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FDP047AN08A0FS-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDP047AN08A0FS-ND
Single FETs, MOSFETs FDP047AN08A0FS-ND
N-Channel 75V 15A (Tc) 310W (Tc) Through Hole TO-220-3

N-Channel 75V 15A (Tc) 310W (Tc) Through Hole TO-220-3

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP047AN08A0 - 016116-FDP047AN08A0 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP047AN08A0
016116-FDP047AN08A0
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP047AN08A0 016116-FDP047AN08A0
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016116-FDP047AN08A0 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 310W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Not For New Designs Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 75V Continuous Drain Current at 25°C: 15A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 138nC @ 10V Max Input Capacitance: 6600pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 4.7 mOhm @ 80A, 10V Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Limited Quantity per package: 800

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016116-FDP047AN08A0
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 310W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Not For New Designs
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 75V
Continuous Drain Current at 25°C: 15A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 138nC @ 10V
Max Input Capacitance: 6600pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 4.7 mOhm @ 80A, 10V
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Limited
Quantity per package: 800

Buy Now Datasheet
Single FETs, MOSFETs - FDP047AN08A0 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDP047AN08A0
Single FETs, MOSFETs FDP047AN08A0
MOSFET N-CH 75V 15A TO220-3

MOSFET N-CH 75V 15A TO220-3

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDP047AN08A0 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDP047AN08A0
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDP047AN08A0
MOSFET N-CH 75V 15A TO220-3

MOSFET N-CH 75V 15A TO220-3

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
FDP047AN08A0
MOSFET FDP047AN08A0
MOSFET 75V N-Ch PowerTrench

MOSFET 75V N-Ch PowerTrench

Buy Now Datasheet
N Channel Mosfet, 75V, 80A To-220Ab; Channel Type Onsemi - 28H9692 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 75V, 80A To-220Ab; Channel Type Onsemi
28H9692
N Channel Mosfet, 75V, 80A To-220Ab; Channel Type Onsemi 28H9692
N CHANNEL MOSFET, 75V, 80A TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:75V; Continuous Drain Current Id:80A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

N CHANNEL MOSFET, 75V, 80A TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:75V; Continuous Drain Current Id:80A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  DigiKey Win Source Electronics ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number FDP047AN08A0FS-ND 016116-FDP047AN08A0 FDP047AN08A0 FDP047AN08A0 FDP047AN08A0 28H9692
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP047AN08A0 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET N Channel Mosfet, 75V, 80A To-220Ab; Channel Type Onsemi
Polarity N-Channel N-Channel; N-Channel N-Channel; N-Channel N-Channel
Package Type TO-220; TO-220-3 TO-220; SOT3; TO-220-3 TO-220; TO-220-3 TO-220; TO-220-3 TO-3; TO-220
V(BR)DSS 75 volts 75 volts
PD 310000 milliwatts 310000 milliwatts
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