Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067009-FDP038AN06A0
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 310W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 17A (Ta), 80A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 124nC @ 10V
Max Input Capacitance: 6400pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3.8 mOhm @ 80A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Limited
Quantity per package: 800
MOSFETs 60V 80a .38 Ohms/VGS=1V Product overview: FDP038AN06A0 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 80a, 1V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 80a, 1V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDP038AN06A0 can be used for catalog matching and distributor lookup.
N-Channel 60V 17A (Ta), 80A (Tc) 310W (Tc) Through Hole TO-220-3
N CHANNEL MOSFET, 60V, 80A TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:80A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes
POWER FIELD-EFFECT TRANSISTOR, 1
60V 3.5mΩ@10V,80A 310W 4V@250uA N Channel TO-220 MOSFETs ROHS
MOSFET N-CH 60V 17A/80A TO220-3
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Newark, An Avnet Company | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | LCSC Electronics Technology (HK) Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 067009-FDP038AN06A0 | 2088-FDP038AN06A0 | FDP038AN06A0-ND | 28H9691 | FDP038AN06A0 | FDP038AN06A0 | FDP038AN06A0 | FDP038AN06A0 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP038AN06A0 | 60V 80a 1V MOSFET Transistor | Single FETs, MOSFETs | N Channel Mosfet, 60V, 80A To-220Ab; Channel Type Onsemi | Single FETs, MOSFETs | MOSFET | Triode/MOS Tube/Transistor >> MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | ||
| V(BR)DSS | 60 volts | 60 volts | 60 volts | |||||
| PD | 310000 milliwatts | 310 milliwatts | 310000 milliwatts | 310000 milliwatts | ||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | |||||
| Package Type | TO-220; SOT3; TO-220-3 | Tube | TO-220; TO-220-3 | TO-3; TO-220 | TO-220; TO-220-3 | TO-220 | TO-220; TO-220-3 |
