onsemi Single FETs, MOSFETs FDP038AN06A0

Description
N-Channel 60V 17A (Ta), 80A (Tc) 310W (Tc) Through Hole TO-220-3
Request a Quote Datasheet
Description
N-Channel 60V 17A (Ta), 80A (Tc) 310W (Tc) Through Hole TO-220-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FDP038AN06A0-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDP038AN06A0-ND
Single FETs, MOSFETs FDP038AN06A0-ND
N-Channel 60V 17A (Ta), 80A (Tc) 310W (Tc) Through Hole TO-220-3

N-Channel 60V 17A (Ta), 80A (Tc) 310W (Tc) Through Hole TO-220-3

Buy Now Datasheet
Single FETs, MOSFETs - FDP038AN06A0 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDP038AN06A0
Single FETs, MOSFETs FDP038AN06A0
POWER FIELD-EFFECT TRANSISTOR, 1

POWER FIELD-EFFECT TRANSISTOR, 1

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP038AN06A0 - 067009-FDP038AN06A0 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP038AN06A0
067009-FDP038AN06A0
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP038AN06A0 067009-FDP038AN06A0
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067009-FDP038AN06A0 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 310W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 17A (Ta), 80A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 124nC @ 10V Max Input Capacitance: 6400pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3.8 mOhm @ 80A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Limited Quantity per package: 800

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067009-FDP038AN06A0
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 310W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 17A (Ta), 80A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 124nC @ 10V
Max Input Capacitance: 6400pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3.8 mOhm @ 80A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Limited
Quantity per package: 800

Buy Now Datasheet
N Channel Mosfet, 60V, 80A To-220Ab; Channel Type Onsemi - 28H9691 - Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 60V, 80A To-220Ab; Channel Type Onsemi
28H9691
N Channel Mosfet, 60V, 80A To-220Ab; Channel Type Onsemi 28H9691
N CHANNEL MOSFET, 60V, 80A TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:80A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

N CHANNEL MOSFET, 60V, 80A TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:80A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET 60V 80a .38 Ohms/VGS=1V

MOSFET 60V 80a .38 Ohms/VGS=1V

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDP038AN06A0 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDP038AN06A0
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDP038AN06A0
MOSFET N-CH 60V 17A/80A TO220-3

MOSFET N-CH 60V 17A/80A TO220-3

Supplier's Site
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
FDP038AN06A0
Triode/MOS Tube/Transistor >> MOSFETs FDP038AN06A0
60V 3.5mΩ@10V,80A 310W 4V@250uA N Channel TO-220 MOSFETs ROHS

60V 3.5mΩ@10V,80A 310W 4V@250uA N Channel TO-220 MOSFETs ROHS

Supplier's Site Datasheet

Technical Specifications

  DigiKey ODG (Origin Data Global) Win Source Electronics Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited LCSC Electronics Technology (HK) Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number FDP038AN06A0-ND FDP038AN06A0 067009-FDP038AN06A0 28H9691 FDP038AN06A0 FDP038AN06A0 FDP038AN06A0
Product Name Single FETs, MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP038AN06A0 N Channel Mosfet, 60V, 80A To-220Ab; Channel Type Onsemi MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Triode/MOS Tube/Transistor >> MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel
Package Type TO-220; TO-220-3 TO-220; TO-220-3 TO-220; SOT3; TO-220-3 TO-3; TO-220 TO-220; TO-220-3 TO-220
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 60 volts 60 volts 60 volts
IDSS 17000 milliamps 80000 milliamps
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