N-Channel 80V 120A (Tc) 246W (Tc) Through Hole TO-220-3
Manufacturer: ON Semiconductor
Win Source Part Number: 1173862-FDP027N08B
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Homepage: www.fairchildsemi.co
Manufacturer Package: TO-220-3
Power Dissipation (Maximum): 246W
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 80V
Id - Continuous Drain Current: 120A
Rds On (Maximum) at Id, Vgs: 2.7mOhm at 100A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4.5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 178nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 13530pF at 40V
MOSFET N-CH 80V 120A TO220-3
| DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | FDP027N08B-ND | 1173862-FDP027N08B | FDP027N08B |
| Product Name | Single FETs, MOSFETs | FETs - Single - FDP027N08B | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | |
| Package Type | TO-220; TO-220-3 | TO-220; SOT3 | TO-220; TO-220-3 |
| V(BR)DSS | 80 volts |
