onsemi Single FETs, MOSFETs FDP025N06

Description
N-Channel 60V 120A (Tc) 395W (Tc) Through Hole TO-220-3
Request a Quote Datasheet
Description
N-Channel 60V 120A (Tc) 395W (Tc) Through Hole TO-220-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FDP025N06-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDP025N06-ND
Single FETs, MOSFETs FDP025N06-ND
N-Channel 60V 120A (Tc) 395W (Tc) Through Hole TO-220-3

N-Channel 60V 120A (Tc) 395W (Tc) Through Hole TO-220-3

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP025N06 - 204102-FDP025N06 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP025N06
204102-FDP025N06
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP025N06 204102-FDP025N06
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 204102-FDP025N06 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 395W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 120A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 226nC @ 10V Max Input Capacitance: 14885pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 2.5 mOhm @ 75A, 10V Popularity: Medium Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Limited Quantity per package: 1k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 204102-FDP025N06
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 395W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 120A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 226nC @ 10V
Max Input Capacitance: 14885pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2.5 mOhm @ 75A, 10V
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Limited
Quantity per package: 1k pcs

Buy Now Datasheet
MOSFETs - 7599664P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
7599664P
MOSFETs 7599664P
MOSFET N-Channel 60V 265A TO220AB

MOSFET N-Channel 60V 265A TO220AB

Supplier's Site
MOSFETs - 8644718 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
8644718
MOSFETs 8644718
MOSFET N-Channel 60V 265A TO220AB

MOSFET N-Channel 60V 265A TO220AB

Supplier's Site
MOSFETs - 7599664 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
7599664
MOSFETs 7599664
MOSFET N-Channel 60V 265A TO220AB

MOSFET N-Channel 60V 265A TO220AB

Supplier's Site
Single FETs, MOSFETs - FDP025N06 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDP025N06
Single FETs, MOSFETs FDP025N06
MOSFET N-CH 60V 120A TO220-3

MOSFET N-CH 60V 120A TO220-3

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET 60V N-Channel PowerTrench

MOSFET 60V N-Channel PowerTrench

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDP025N06 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDP025N06
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDP025N06
MOSFET N-CH 60V 120A TO220-3

MOSFET N-CH 60V 120A TO220-3

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics RS Components, Ltd. RS Components, Ltd. ODG (Origin Data Global) VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FDP025N06-ND 204102-FDP025N06 7599664P 8644718 FDP025N06 FDP025N06 FDP025N06
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP025N06 MOSFETs MOSFETs Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 TO-220; SOT3; TO-220AB TO-220; TO-220 TO-220; To-220 TO-220; TO-220-3 10V
V(BR)DSS 60 volts 60 volts
PD 395000 milliwatts 395000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
Unlock Full Specs
to access all available technical data