The FDN86265P is a P-Channel MOSFET designed for applications requiring low on-state resistance and fast switching capabilities. It features a maximum drain-to-source voltage of -150 V and a continuous drain current rating of -0.8 A, with a power dissipation of 1.5 W. The device exhibits a low on-resistance of 1.2 Oc at a gate-to-source voltage of -10 V and a drain current of -0.8 A, making it suitable for load switch applications. This MOSFET is optimized for low gate charge, which enhances its performance in fast switching applications. It is packaged in a SOT-23 surface mount configuration, facilitating easy integration into compact designs. The FDN86265P is also compliant with RoHS standards, ensuring it is free from lead and halides. With a wide operating temperature range of -55¬8C to +150¬8C, it is suitable for various environmental conditions. The device has been 100% UIL tested and is rated for ESD protection levels, making it a reliable choice for engineers looking for robust performance in their projects.
P-Channel 150V 800mA (Ta) 1.5W (Ta) Surface Mount SOT-23-3
P-Channel 150V 800mA (Ta) 1.5W (Ta) Surface Mount SOT-23-3
P-Channel 150V 800mA (Ta) 1.5W (Ta) Surface Mount SOT-23-3
Manufacturer: ON Semiconductor
Win Source Part Number: 871673-FDN86265P
Series: PowerTrench®
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: P-Channel 150 V 800mA (Ta) 1.5W (Ta) Surface Mount SOT-23-3
Package: TO-236-3, SC-59, SOT-23-3
Package: Reel - TR
Mounting: Surface Mount
Family Name: FDN86265
Categories: Discrete Semiconductor Products
Case / Package: SOT-23-3
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 93 pct.
Supply and Demand Status: Limited
Quantity per package: 3000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 38 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: FDN86265PTR, FDN86265PCT, FDN86265PDKR
MOSFET P-Ch 150V 0.8A Shielded Gate SSOT
MOSFET P-Ch 150V 0.8A Shielded Gate SSOT
MOSFET P-Ch 150V 0.8A Shielded Gate SSOT
MOSFET PT5 150/25V Pch PowerTrench MOSFET
MOSFET P-CH 150V 800MA SUPERSOT3
MOSFET, P-CH, -150V, -0.8A, SUPERSOT-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-800mA; Drain Source Voltage Vds:-150V; On Resistance Rds(on):0.85ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3.3V; RoHS Compliant: Yes
| DigiKey | Win Source Electronics | RS Components, Ltd. | RS Components, Ltd. | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FDN86265PCT-ND | 871673-FDN86265P | 8648512P | 8648512 | FDN86265P | FDN86265P | 46AC0807 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDN86265P | MOSFETs | MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, P-Ch, -150V, -0.8A, Supersot-3; Transistor Polarity Onsemi |
| Polarity | P-Channel | P-Channel | P-Channel | ||||
| Package Type | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT3; SOT23; SOT-23-3 | SOT23; SOT-23 | SOT23; Sot-23 | SOT23; TO-236-3, SC-59, SOT-23-3 | TO-3; SOT3 | |
| TJ | -55 to 150 C (-67 to 302 F) | ||||||
| MOSFET Operating Mode | Enhancement |
