The N Channel MOSFET, part number 58K8845, is designed for applications requiring efficient switching, such as DC/DC converters and motor drives. It has a maximum drain-source voltage of 60V and a continuous drain current rating of 1.7A. The device features a low on-resistance (R_DS(ON)) of 0.100,Ѷ at a gate-source voltage of 10V, which contributes to improved efficiency in high-frequency applications. The MOSFET is housed in a SuperSOT-3 package, providing a compact footprint suitable for space-constrained designs. It also offers fast switching capabilities with a total gate charge of 10nC, making it suitable for high-speed applications. The operating temperature range is from -55¬8C to +150¬8C, ensuring reliability in various environments.
N-Channel 60V 1.7A (Ta) 500mW (Ta) Surface Mount SOT-23-3
N-Channel 60V 1.7A (Ta) 500mW (Ta) Surface Mount SOT-23-3
N-Channel 60V 1.7A (Ta) 500mW (Ta) Surface Mount SOT-23-3
MOSFET N-CH 60V 1.7A SUPERSOT3
MOSFETs SSOT-3 N-CH 60V Product overview: FDN5630 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDN5630 can be used for catalog matching and distributor lookup.
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016113-FDN5630
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 500mW (Ta)
Family Name: FDN5630
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SuperSOT-3
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 1.7A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 10nC @ 10V
Max Input Capacitance: 400pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 100 mOhm @ 1.7A, 10V
Alternative Parts (Cross-Reference): RSR020N06FRATL; RSR020N06HZGTL; RSR020N06;
Introduction Date: March 21, 2000
ECCN: EAR99
Country of Origin: Israel, Philippines
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management, Motor Drive & Control
Quantity per package: 3k pcs
N CHANNEL MOSFET, 60V, 1.7A, SUPER SOT-3; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:1.7A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.4V RoHS Compliant: Yes
MOSFET, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:1.7A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.4V; Power Dissipation:500mW RoHS Compliant: Yes
MOSFET N-CH 60V 1.7A SUPERSOT3
| DigiKey | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | FDN5630TR-ND | FDN5630 | 2088-FDN5630 | 016113-FDN5630 | 58K8845 | 67R2066 | FDN5630 | FDN5630 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | 60V MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDN5630 | N Channel Mosfet, 60V, 1.7A, Super Sot-3; Channel Type Onsemi | Mosfet, Full Reel; Channel Type Onsemi | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |||
| Package Type | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT23; TO-236-3, SC-59, SOT-23-3 | Reel | SOT3; SOT23; SuperSOT-3 | TO-3; SOT3 | TO-3 | SOT23; TO-236-3, SC-59, SOT-23-3 | |
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||
| V(BR)DSS | 60 volts | 60 volts | ||||||
| IDSS | 1700 milliamps | 1700 milliamps | 1700 milliamps |
