Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067007-FDN372S
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 500mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SuperSOT-3
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 2.6A (Ta)
Gate-Source Threshold Voltage: 3V @ 1mA
Max Gate Charge: 8.1nC @ 5V
Max Input Capacitance: 630pF @ 15V
Maximum Gate-Source Voltage: ±16V
Maximum Rds On at Id,Vgs: 40 mOhm @ 2.6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Power Management, Motor Drive & Control
MOSFET N-CH 30V 2.6A SUPERSOT3 Product overview: FDN372S from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 2.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 2.6A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDN372S can be used for catalog matching and distributor lookup.
MOSFET N-CH 30V 2.6A SUPERSOT3
N-Channel 30V 2.6A (Ta) 500mW (Ta) Surface Mount SOT-23-3
Small Signal Field-Effect Transistor, 2.6A, 30V, N-Channel MOSFET
MOSFET N-CH 30V 2.6A SUPERSOT3
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | Rochester Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF MOSFET Transistors | RF Transistors |
| Product Number | 067007-FDN372S | 278-FDN372S | FDN372S | FDN372S-ND | FDN372S | FDN372S |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDN372S | 30V 2.6A MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | ||
| V(BR)DSS | 30 volts | 30 volts | ||||
| PD | 500 milliwatts | 500 milliwatts | 500 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |