onsemi Single FETs, MOSFETs FDN372S

Description
MOSFET N-CH 30V 2.6A SUPERSOT3
Request a Quote Datasheet
Description
MOSFET N-CH 30V 2.6A SUPERSOT3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FDN372S - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDN372S
Single FETs, MOSFETs FDN372S
MOSFET N-CH 30V 2.6A SUPERSOT3

MOSFET N-CH 30V 2.6A SUPERSOT3

Supplier's Site
Single FETs, MOSFETs - FDN372S-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDN372S-ND
Single FETs, MOSFETs FDN372S-ND
N-Channel 30V 2.6A (Ta) 500mW (Ta) Surface Mount SOT-23-3

N-Channel 30V 2.6A (Ta) 500mW (Ta) Surface Mount SOT-23-3

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDN372S - 067007-FDN372S - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDN372S
067007-FDN372S
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDN372S 067007-FDN372S
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067007-FDN372S Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 500mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SuperSOT-3 Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 2.6A (Ta) Gate-Source Threshold Voltage: 3V @ 1mA Max Gate Charge: 8.1nC @ 5V Max Input Capacitance: 630pF @ 15V Maximum Gate-Source Voltage: ±16V Maximum Rds On at Id,Vgs: 40 mOhm @ 2.6A, 10V Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Sufficient Application Field: Used in Power Management, Motor Drive & Control

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067007-FDN372S
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 500mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SuperSOT-3
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 2.6A (Ta)
Gate-Source Threshold Voltage: 3V @ 1mA
Max Gate Charge: 8.1nC @ 5V
Max Input Capacitance: 630pF @ 15V
Maximum Gate-Source Voltage: ±16V
Maximum Rds On at Id,Vgs: 40 mOhm @ 2.6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Power Management, Motor Drive & Control

Buy Now Datasheet
 - FDN372S - Rochester Electronics
Newburyport, MA, United States
Small Signal Field-Effect Transistor, 2.6A, 30V, N-Channel MOSFET

Small Signal Field-Effect Transistor, 2.6A, 30V, N-Channel MOSFET

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDN372S - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDN372S
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDN372S
MOSFET N-CH 30V 2.6A SUPERSOT3

MOSFET N-CH 30V 2.6A SUPERSOT3

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) DigiKey Win Source Electronics Rochester Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF MOSFET Transistors RF Transistors
Product Number FDN372S FDN372S-ND 067007-FDN372S FDN372S FDN372S
Product Name Single FETs, MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDN372S Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 30 volts 30 volts
IDSS 2600 milliamps
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