onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDN361BN FDN361BN

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038290-FDN361BN Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 500mW (Ta) Family Name: FDN361BN Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SuperSOT-3 Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 1.4A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 1.8nC @ 4.5V Max Input Capacitance: 193pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 110 mOhm @ 1.4A, 10V Alternative Parts (Cross-Reference): SI2304DS/DG,215; SI2304DS; PMV117EN; PMV117EN,215; Introduction Date: October 01, 2005 ECCN: EAR99 Country of Origin: Malaysia, Philippines Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Balance Quantity per package: 3k pcs
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDN361BN - 1038290-FDN361BN - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - FDN361BNTR-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDN361BN - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, N Ch, 30V, 1.4A, Sot-23-6; Channel Type Onsemi - 31Y1380 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038290-FDN361BN Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 500mW (Ta) Family Name: FDN361BN Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SuperSOT-3 Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 1.4A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 1.8nC @ 4.5V Max Input Capacitance: 193pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 110 mOhm @ 1.4A, 10V Alternative Parts (Cross-Reference): SI2304DS/DG,215; SI2304DS; PMV117EN; PMV117EN,215; Introduction Date: October 01, 2005 ECCN: EAR99 Country of Origin: Malaysia, Philippines Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Balance Quantity per package: 3k pcs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDN361BN - 1038290-FDN361BN - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDN361BN
1038290-FDN361BN
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDN361BN 1038290-FDN361BN
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038290-FDN361BN Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 500mW (Ta) Family Name: FDN361BN Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SuperSOT-3 Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 1.4A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 1.8nC @ 4.5V Max Input Capacitance: 193pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 110 mOhm @ 1.4A, 10V Alternative Parts (Cross-Reference): SI2304DS/DG,215; SI2304DS; PMV117EN; PMV117EN,215; Introduction Date: October 01, 2005 ECCN: EAR99 Country of Origin: Malaysia, Philippines Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Balance Quantity per package: 3k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038290-FDN361BN
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 500mW (Ta)
Family Name: FDN361BN
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SuperSOT-3
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 1.4A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 1.8nC @ 4.5V
Max Input Capacitance: 193pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 110 mOhm @ 1.4A, 10V
Alternative Parts (Cross-Reference): SI2304DS/DG,215; SI2304DS; PMV117EN; PMV117EN,215;
Introduction Date: October 01, 2005
ECCN: EAR99
Country of Origin: Malaysia, Philippines
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs

Buy Now Datasheet
Single FETs, MOSFETs - FDN361BNTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDN361BNTR-ND
Single FETs, MOSFETs FDN361BNTR-ND
N-Channel 30V 1.4A (Ta) 500mW (Ta) Surface Mount SOT-23-3

N-Channel 30V 1.4A (Ta) 500mW (Ta) Surface Mount SOT-23-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDN361BN - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDN361BN
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDN361BN
MOSFET N-CH 30V 1.4A SUPERSOT3

MOSFET N-CH 30V 1.4A SUPERSOT3

Supplier's Site
Mosfet, N Ch, 30V, 1.4A, Sot-23-6; Channel Type Onsemi - 31Y1380 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Ch, 30V, 1.4A, Sot-23-6; Channel Type Onsemi
31Y1380
Mosfet, N Ch, 30V, 1.4A, Sot-23-6; Channel Type Onsemi 31Y1380
MOSFET, N CH, 30V, 1.4A, SOT-23-6; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:1.4A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.1V RoHS Compliant: Yes

MOSFET, N CH, 30V, 1.4A, SOT-23-6; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:1.4A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.1V RoHS Compliant: Yes

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
FDN361BN
MOSFET FDN361BN
MOSFET 30V N-Ch LogicLevel PowerTrench MOSFET

MOSFET 30V N-Ch LogicLevel PowerTrench MOSFET

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1038290-FDN361BN FDN361BNTR-ND FDN361BN 31Y1380 FDN361BN
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDN361BN Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N Ch, 30V, 1.4A, Sot-23-6; Channel Type Onsemi MOSFET
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 30 volts
PD 500 milliwatts
TJ -55 to 150 C (-67 to 302 F)
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