Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038290-FDN361BN
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 500mW (Ta)
Family Name: FDN361BN
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SuperSOT-3
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 1.4A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 1.8nC @ 4.5V
Max Input Capacitance: 193pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 110 mOhm @ 1.4A, 10V
Alternative Parts (Cross-Reference): SI2304DS/DG,215; SI2304DS; PMV117EN; PMV117EN,215;
Introduction Date: October 01, 2005
ECCN: EAR99
Country of Origin: Malaysia, Philippines
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs
N-Channel 30V 1.4A (Ta) 500mW (Ta) Surface Mount SOT-23-3
MOSFETs 30V N-Ch LogicLevel PowerTrench MOSFET Product overview: FDN361BN from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDN361BN can be used for catalog matching and distributor lookup.
MOSFET N-CH 30V 1.4A SUPERSOT3
MOSFET 30V N-Ch LogicLevel PowerTrench MOSFET
MOSFET, N CH, 30V, 1.4A, SOT-23-6; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:1.4A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.1V RoHS Compliant: Yes
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1038290-FDN361BN | FDN361BNTR-ND | 2088-FDN361BN | FDN361BN | FDN361BN | 31Y1380 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDN361BN | Single FETs, MOSFETs | 30V MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N Ch, 30V, 1.4A, Sot-23-6; Channel Type Onsemi |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | |||
| V(BR)DSS | 30 volts | |||||
| PD | 500 milliwatts | 500 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) |