onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDN361AN FDN361AN

Small Signal Field-Effect Transistor, 1.8A, 30V, N-Channel MOSFET

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067005-FDN361AN
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 500mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SuperSOT-3
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 1.8A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 4nC @ 5V
Max Input Capacitance: 220pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 100 mOhm @ 1.8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Power Management, Industrial

MOSFET N-CH 30V 1.8A SSOT-3 Product overview: FDN361AN from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 1.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 1.8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDN361AN can be used for catalog matching and distributor lookup.

N-Channel 30V 1.8A (Ta) 500mW (Ta) Surface Mount SOT-23-3