P-Channel 30V 2A (Ta) 500mW (Ta) Surface Mount SOT-23-3
P-Channel 30V 2A (Ta) 500mW (Ta) Surface Mount SOT-23-3
P-Channel 30V 2A (Ta) 500mW (Ta) Surface Mount SOT-23-3
MOSFET P-CH 30V 2A SUPERSOT3
SMALL SIGNAL FIELD-EFFECT TRANSI
MOSFET P-Channel 30V 2A SuperSOT3
MOSFETs SSOT-3 P-CH -30V Product overview: FDN360P from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include -30V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -30V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDN360P can be used for catalog matching and distributor lookup.
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 095001-FDN360P
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 500mW (Ta)
Family Name: FDN360P
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SuperSOT-3
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 2A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 9nC @ 10V
Max Input Capacitance: 298pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 80 mOhm @ 2A, 10V
Alternative Parts (Cross-Reference): SI2307DS-T3; TSM650P03CX RFG; Si2307DS-T1-E3;
Introduction Date: March 24, 1999
ECCN: EAR99
Country of Origin: Israel, Philippines
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Power Management, Consumer Electronics, Portable Devices, Industrial
Quantity per package: 3k pcs
P CHANNEL MOSFET, -30V, 2A, SUPER SOT-3; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:20V RoHS Compliant: Yes
MOSFET Transistor, P Channel, 2 A, 30 V, 80 mohm, -10 V, -1.9 V RoHS Compliant: Yes
TRANSISTOR, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:20V; Power Dissipation:500mW RoHS Compliant: Yes
MOSFET Transistor, P Channel, 2 A, -30 V, 80 mohm, -10 V, 20 V RoHS Compliant: Yes
MOSFET P-CH 30V 2A SUPERSOT3
30V 2A 500mW 80mΩ@10V,2A 3V@250uA P Channel SOT-23 MOSFETs ROHS
| DigiKey | ODG (Origin Data Global) | RS Components, Ltd. | RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Newark, An Avnet Company | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | LCSC Electronics Technology (HK) Limited | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FDN360PCT-ND | FDN360P | 6710457 | 6710457P | 2088-FDN360P | 095001-FDN360P | 58K1466 | 25M9464 | 67R2064 | FDN360P | FDN360P | FDN360P |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFETs | MOSFETs | -30V MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDN360P | P Channel Mosfet, -30V, 2A, Super Sot-3; Channel Type Onsemi | Mosfet Transistor, P Channel, 2 A, 30 V, 80 Mohm, -10 V, -1.9 V Rohs Compliant Onsemi | Transistor, Full Reel; Channel Type Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Triode/MOS Tube/Transistor >> MOSFETs |
| Polarity | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel | |||
| Package Type | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT23; Sot-23 | SOT23; SOT-23 | Reel | SOT3; SOT23; SuperSOT-3 | TO-3; SOT3 | TO-3 | TO-3 | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT23 | |
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||||||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | |||||||||
| IDSS | 2000 milliamps | 2000 milliamps |
