onsemi Single FETs, MOSFETs FDN352AP

Description
P-Channel 30V 1.3A (Ta) 500mW (Ta) Surface Mount SOT-23-3
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Description
P-Channel 30V 1.3A (Ta) 500mW (Ta) Surface Mount SOT-23-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FDN352APDKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDN352APDKR-ND
Single FETs, MOSFETs FDN352APDKR-ND
P-Channel 30V 1.3A (Ta) 500mW (Ta) Surface Mount SOT-23-3

P-Channel 30V 1.3A (Ta) 500mW (Ta) Surface Mount SOT-23-3

Buy Now Datasheet
Single FETs, MOSFETs - FDN352APCT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDN352APCT-ND
Single FETs, MOSFETs FDN352APCT-ND
P-Channel 30V 1.3A (Ta) 500mW (Ta) Surface Mount SOT-23-3

P-Channel 30V 1.3A (Ta) 500mW (Ta) Surface Mount SOT-23-3

Buy Now Datasheet
Single FETs, MOSFETs - FDN352APTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDN352APTR-ND
Single FETs, MOSFETs FDN352APTR-ND
P-Channel 30V 1.3A (Ta) 500mW (Ta) Surface Mount SOT-23-3

P-Channel 30V 1.3A (Ta) 500mW (Ta) Surface Mount SOT-23-3

Buy Now Datasheet
Singapore
30V 1.3A SOT-23 MOSFET Transistor
278-FDN352AP
30V 1.3A SOT-23 MOSFET Transistor 278-FDN352AP
P-CH MOSFET 30V 1.3A 180mR SOT-23 Product overview: FDN352AP from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 1.3A, SOT-23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 1.3A, SOT-23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDN352AP can be used for catalog matching and distributor lookup.

P-CH MOSFET 30V 1.3A 180mR SOT-23 Product overview: FDN352AP from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 1.3A, SOT-23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 1.3A, SOT-23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDN352AP can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
MOSFETs - 6710447 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
6710447
MOSFETs 6710447
MOSFET P-Channel 30V 1.3A SuperSOT3

MOSFET P-Channel 30V 1.3A SuperSOT3

Supplier's Site
MOSFETs - 6710447P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
6710447P
MOSFETs 6710447P
MOSFET P-Channel 30V 1.3A SuperSOT3

MOSFET P-Channel 30V 1.3A SuperSOT3

Supplier's Site
MOSFETs - 1461962 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1461962
MOSFETs 1461962
MOSFET P-Channel 30V 1.3A SuperSOT3

MOSFET P-Channel 30V 1.3A SuperSOT3

Supplier's Site
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDN352AP - 016108-FDN352AP - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDN352AP
016108-FDN352AP
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDN352AP 016108-FDN352AP
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016108-FDN352AP Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 500mW (Ta) Family Name: FDN352AP Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SuperSOT-3 Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 1.3A (Ta) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 1.9nC @ 4.5V Max Input Capacitance: 150pF @ 15V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 180 mOhm @ 1.3A, 10V Alternative Parts (Cross-Reference): Si2303BDS; Si2303BDS-T1-E3; Si2303BDS-T1; Introduction Date: April 21, 2005 ECCN: EAR99 Country of Origin: Israel, Philippines Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Balance Application Field: Used in Computers & Computer Peripherals, Power Management Quantity per package: 3k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016108-FDN352AP
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 500mW (Ta)
Family Name: FDN352AP
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SuperSOT-3
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 1.3A (Ta)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 1.9nC @ 4.5V
Max Input Capacitance: 150pF @ 15V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 180 mOhm @ 1.3A, 10V
Alternative Parts (Cross-Reference): Si2303BDS; Si2303BDS-T1-E3; Si2303BDS-T1;
Introduction Date: April 21, 2005
ECCN: EAR99
Country of Origin: Israel, Philippines
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Balance
Application Field: Used in Computers & Computer Peripherals, Power Management
Quantity per package: 3k pcs

Buy Now Datasheet
Single FETs, MOSFETs - FDN352AP - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDN352AP
Single FETs, MOSFETs FDN352AP
MOSFET P-CH 30V 1.3A SUPERSOT3

MOSFET P-CH 30V 1.3A SUPERSOT3

Supplier's Site Datasheet
Single FETs, MOSFETs - FDN352AP - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDN352AP
Single FETs, MOSFETs FDN352AP
SMALL SIGNAL FIELD-EFFECT TRANSI

SMALL SIGNAL FIELD-EFFECT TRANSI

Supplier's Site Datasheet
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
FDN352AP
Triode/MOS Tube/Transistor >> MOSFETs FDN352AP
30V 1.3A 500mW 180mΩ@10V,1.3A 2.5V@250uA P Channel SOT-23 MOSFETs ROHS

30V 1.3A 500mW 180mΩ@10V,1.3A 2.5V@250uA P Channel SOT-23 MOSFETs ROHS

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDN352AP - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDN352AP
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDN352AP
MOSFET P-CH 30V 1.3A SUPERSOT3

MOSFET P-CH 30V 1.3A SUPERSOT3

Supplier's Site
Sheung Wan, Hong Kong
MOSFET
FDN352AP
MOSFET FDN352AP
MOSFET SINGLE PCH TRENCH MOSFET

MOSFET SINGLE PCH TRENCH MOSFET

Buy Now Datasheet
P Channel Mosfet, -30V, 1.3A Super Sot-3; Channel Type Onsemi - 64K0974 - Newark, An Avnet Company
Chicago, IL, United States
P Channel Mosfet, -30V, 1.3A Super Sot-3; Channel Type Onsemi
64K0974
P Channel Mosfet, -30V, 1.3A Super Sot-3; Channel Type Onsemi 64K0974
P CHANNEL MOSFET, -30V, 1.3A SUPER SOT-3; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:1.3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes

P CHANNEL MOSFET, -30V, 1.3A SUPER SOT-3; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:1.3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes

Supplier's Site
Mosfet, Full Reel; Channel Type Onsemi - 67R2062 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, Full Reel; Channel Type Onsemi
67R2062
Mosfet, Full Reel; Channel Type Onsemi 67R2062
MOSFET, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:1.3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; Power Dissipation:500mW RoHS Compliant: Yes

MOSFET, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:1.3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; Power Dissipation:500mW RoHS Compliant: Yes

Supplier's Site
Mosfet, P, Smd, 3-Supersot; Transistor Polarity Onsemi - 58M6632 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P, Smd, 3-Supersot; Transistor Polarity Onsemi
58M6632
Mosfet, P, Smd, 3-Supersot; Transistor Polarity Onsemi 58M6632
MOSFET, P, SMD, 3-SUPERSOT; Transistor Polarity:P Channel; Continuous Drain Current Id:-1.3A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.18ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2V; Power Dissipation RoHS Compliant: Yes

MOSFET, P, SMD, 3-SUPERSOT; Transistor Polarity:P Channel; Continuous Drain Current Id:-1.3A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.18ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2V; Power Dissipation RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. RS Components, Ltd. RS Components, Ltd. Win Source Electronics ODG (Origin Data Global) LCSC Electronics Technology (HK) Limited Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company Newark, An Avnet Company Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number FDN352APDKR-ND 278-FDN352AP 6710447 6710447P 016108-FDN352AP FDN352AP FDN352AP FDN352AP FDN352AP 64K0974 67R2062 58M6632
Product Name Single FETs, MOSFETs 30V 1.3A SOT-23 MOSFET Transistor MOSFETs MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDN352AP Single FETs, MOSFETs Triode/MOS Tube/Transistor >> MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET P Channel Mosfet, -30V, 1.3A Super Sot-3; Channel Type Onsemi Mosfet, Full Reel; Channel Type Onsemi Mosfet, P, Smd, 3-Supersot; Transistor Polarity Onsemi
Polarity P-Channel P-Channel P-Channel P-Channel P-Channel; P-Channel P-Channel; P-Channel P-Channel P-Channel
Package Type SOT23; TO-236-3, SC-59, SOT-23-3 SOT23; Sot-23 SOT23; SOT-23 SOT3; SOT23; SuperSOT-3 SOT23; TO-236-3, SC-59, SOT-23-3 SOT23 SOT23; TO-236-3, SC-59, SOT-23-3 TO-3; SOT3 TO-3 TO-3
PD 500 milliwatts 500 milliwatts 500 milliwatts 500 milliwatts 500 milliwatts
TJ -55 C (-67 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
MOSFET Operating Mode Enhancement
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