P-Channel 30V 1.3A (Ta) 500mW (Ta) Surface Mount SOT-23-3
P-Channel 30V 1.3A (Ta) 500mW (Ta) Surface Mount SOT-23-3
P-Channel 30V 1.3A (Ta) 500mW (Ta) Surface Mount SOT-23-3
P-CH MOSFET 30V 1.3A 180mR SOT-23 Product overview: FDN352AP from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 1.3A, SOT-23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 1.3A, SOT-23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDN352AP can be used for catalog matching and distributor lookup.
MOSFET P-Channel 30V 1.3A SuperSOT3
MOSFET P-Channel 30V 1.3A SuperSOT3
MOSFET P-Channel 30V 1.3A SuperSOT3
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016108-FDN352AP
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 500mW (Ta)
Family Name: FDN352AP
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SuperSOT-3
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 1.3A (Ta)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 1.9nC @ 4.5V
Max Input Capacitance: 150pF @ 15V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 180 mOhm @ 1.3A, 10V
Alternative Parts (Cross-Reference): Si2303BDS; Si2303BDS-T1-E3; Si2303BDS-T1;
Introduction Date: April 21, 2005
ECCN: EAR99
Country of Origin: Israel, Philippines
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Balance
Application Field: Used in Computers & Computer Peripherals, Power Management
Quantity per package: 3k pcs
MOSFET P-CH 30V 1.3A SUPERSOT3
SMALL SIGNAL FIELD-EFFECT TRANSI
30V 1.3A 500mW 180mΩ@10V,1.3A 2.5V@250uA P Channel SOT-23 MOSFETs ROHS
MOSFET P-CH 30V 1.3A SUPERSOT3
P CHANNEL MOSFET, -30V, 1.3A SUPER SOT-3; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:1.3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes
MOSFET, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:1.3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; Power Dissipation:500mW RoHS Compliant: Yes
MOSFET, P, SMD, 3-SUPERSOT; Transistor Polarity:P Channel; Continuous Drain Current Id:-1.3A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.18ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2V; Power Dissipation RoHS Compliant: Yes
| DigiKey | ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | RS Components, Ltd. | Win Source Electronics | ODG (Origin Data Global) | LCSC Electronics Technology (HK) Limited | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FDN352APDKR-ND | 278-FDN352AP | 6710447 | 6710447P | 016108-FDN352AP | FDN352AP | FDN352AP | FDN352AP | FDN352AP | 64K0974 | 67R2062 | 58M6632 |
| Product Name | Single FETs, MOSFETs | 30V 1.3A SOT-23 MOSFET Transistor | MOSFETs | MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDN352AP | Single FETs, MOSFETs | Triode/MOS Tube/Transistor >> MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | P Channel Mosfet, -30V, 1.3A Super Sot-3; Channel Type Onsemi | Mosfet, Full Reel; Channel Type Onsemi | Mosfet, P, Smd, 3-Supersot; Transistor Polarity Onsemi |
| Polarity | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | ||||
| Package Type | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT23; Sot-23 | SOT23; SOT-23 | SOT3; SOT23; SuperSOT-3 | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT23 | SOT23; TO-236-3, SC-59, SOT-23-3 | TO-3; SOT3 | TO-3 | TO-3 | ||
| PD | 500 milliwatts | 500 milliwatts | 500 milliwatts | 500 milliwatts | 500 milliwatts | |||||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||||||
| MOSFET Operating Mode | Enhancement |