The FDN338P is a P-Channel MOSFET transistor designed for applications requiring efficient power management. It has a maximum continuous drain current of 1.6 A and a drain-source voltage rating of -20 V. The device features a low on-resistance of 130 mOc at a gate-source voltage of -4.5 V, which contributes to its high efficiency in switching applications. The transistor is optimized for battery management, load switching, and battery protection applications. It operates within a temperature range of -55 to +150 ¬8C and is RoHS compliant, making it suitable for environmentally conscious designs. The FDN338P is packaged in a SuperSOT-3 format, providing a compact footprint with enhanced power handling capabilities compared to traditional SOT-23 packages.
MOSFET P-CH 20V 1.6A SUPERSOT3
SMALL SIGNAL FIELD-EFFECT TRANSI
MOSFET P-Channel 20V 1.6A SuperSOT3
MOSFET P-Channel 20V 1.6A SuperSOT3
MOSFET P-Channel 20V 1.6A SuperSOT3
P-Channel 20V 1.6A (Ta) 500mW (Ta) Surface Mount SOT-23-3
P-Channel 20V 1.6A (Ta) 500mW (Ta) Surface Mount SOT-23-3
P-Channel 20V 1.6A (Ta) 500mW (Ta) Surface Mount SOT-23-3
MOSFETs SSOT-3 P-CH -20V Product overview: FDN338P from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include -20V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -20V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDN338P can be used for catalog matching and distributor lookup.
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016105-FDN338P
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 500mW (Ta)
Family Name: FDN338P
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SuperSOT-3
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 1.6A (Ta)
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 6.2nC @ 4.5V
Max Input Capacitance: 451pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 115 mOhm @ 1.6A, 4.5V
Alternative Parts (Cross-Reference): BSS215PL6327ZT; BSS215PL6327XT; BSS215P H6327;
Introduction Date: April 17, 1998
ECCN: EAR99
Country of Origin: Israel, Philippines
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Power Management, Industrial
Quantity per package: 3k pcs
MOSFET Transistor, P Channel, -1.6 A, -20 V, 0.088 ohm, -4.5 V, -800 mV RoHS Compliant: Yes
MOSFET, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:1.6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:800mV; Power Dissipation:500mWRoH
MOSFET Transistor, P Channel, 1.6 A, 20 V, 130 mohm, -4.5 V, -800 mV RoHS Compliant: Yes
P CHANNEL MOSFET, -20V, 1.6A SUPER SOT-3; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:1.6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:800mV RoHS Compliant: Yes
MOSFET P-CH 20V 1.6A SUPERSOT3
| ODG (Origin Data Global) | RS Components, Ltd. | RS Components, Ltd. | DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | FDN338P | 6710438 | 6710438P | FDN338PTR-ND | 2088-FDN338P | 016105-FDN338P | FDN338P | 04X6263 | 67R2059 | 58K8840 | FDN338P |
| Product Name | Single FETs, MOSFETs | MOSFETs | MOSFETs | Single FETs, MOSFETs | -20V MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDN338P | MOSFET | Mosfet Transistor, P Channel, -1.6 A, -20 V, 0.088 Ohm, -4.5 V, -800 Mv Rohs Compliant Onsemi | Mosfet, Full Reel; Channel Type Onsemi | P Channel Mosfet, -20V, 1.6A Super Sot-3; Channel Type Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||||||
| V(BR)DSS | 20 volts | 20 volts | |||||||||
| IDSS | 1600 milliamps | 1600 milliamps | 1600 milliamps | ||||||||
| PD | 500 milliwatts | 500 milliwatts | 500 milliwatts | 500 milliwatts |
