N-Channel 30V 2.2A (Ta) 500mW (Ta) Surface Mount SOT-23-3
N-Channel 30V 2.2A (Ta) 500mW (Ta) Surface Mount SOT-23-3
N-Channel 30V 2.2A (Ta) 500mW (Ta) Surface Mount SOT-23-3
MOSFETs SSOT-3 N-CH 30V Product overview: FDN337N from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDN337N can be used for catalog matching and distributor lookup.
MOSFET N-Channel 30V 2.2A SuperSOT3
MOSFET N-Channel 30V 2.2A SuperSOT3
MOSFET N-Channel 30V 2.2A SuperSOT3
SMALL SIGNAL FIELD-EFFECT TRANSI
MOSFET N-CH 30V 2.2A SUPERSOT3
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016104-FDN337N
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 500mW (Ta)
Family Name: FDN337N
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SuperSOT-3
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 2.2A (Ta)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 9nC @ 4.5V
Max Input Capacitance: 300pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 65 mOhm @ 2.2A, 4.5V
Alternative Parts (Cross-Reference): DMN3200U; RSR025N03TR; DMN3200U-7;
Introduction Date: May 15, 1998
ECCN: EAR99
Country of Origin: Israel, Philippines
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Power Management, Industrial, Portable Devices, Consumer Electronics
Quantity per package: 3k pcs
30V 2.2A 500mW 65mΩ@4.5V,2.2A 1V@250uA N Channel SuperSOT-6 MOSFETs ROHS
N CHANNEL MOSFET, 30V, 2.2A, SUPER SOT-3; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:2.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:700mV RoHS Compliant: Yes
MOSFET Transistor, N Channel, 2.2 A, 30 V, 65 mohm, 4.5 V, 700 mV RoHS Compliant: Yes
MOSFET Transistor, N Channel, 2.2 A, 30 V, 0.054 ohm, 4.5 V, 700 mV RoHS Compliant: Yes
MOSFET N-CH 30V 2.2A SUPERSOT3
| DigiKey | ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | RS Components, Ltd. | ODG (Origin Data Global) | Win Source Electronics | LCSC Electronics Technology (HK) Limited | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FDN337NCT-ND | 2088-FDN337N | 6710429 | 6710429P | FDN337N | 016104-FDN337N | FDN337N | 58K1464 | 25M9458 | FDN337N | FDN337N |
| Product Name | Single FETs, MOSFETs | 30V MOSFET Transistor | MOSFETs | MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDN337N | Triode/MOS Tube/Transistor >> MOSFETs | N Channel Mosfet, 30V, 2.2A, Super Sot-3; Channel Type Onsemi | Mosfet Transistor, N Channel, 2.2 A, 30 V, 65 Mohm, 4.5 V, 700 Mv Rohs Compliant Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | ||
| Package Type | SOT23; TO-236-3, SC-59, SOT-23-3 | Reel | SOT23; Sot-23 | SOT23; SOT-23 | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT3; SOT23; SuperSOT-3 | TO-3; SOT3 | TO-3 | SOT23; TO-236-3, SC-59, SOT-23-3 | ||
| MOSFET Operating Mode | Enhancement | Enhancement | |||||||||
| Transconductance | 0.0130 kS | ||||||||||
| PD | 500 milliwatts | 500 milliwatts | 500 milliwatts | 500 milliwatts |
