The FDN308P is a P-Channel MOSFET transistor designed for power management applications. It has a maximum drain-source voltage of -20 V and a continuous drain current rating of -1.5 A. The device features a low on-resistance of 125 m,Ѷ at a gate-source voltage of -4.5 V, making it suitable for efficient switching applications. The MOSFET operates effectively within a gate drive voltage range of 2.5 V to 12 V. It is housed in a SuperSOT-3 package, which offers a compact footprint and improved power handling capability compared to traditional SOT23 packages. The device is RoHS compliant, ensuring it meets environmental regulations.
MOSFET P-CH 20V 1.5A SUPERSOT3
P-Channel 20V 1.5A (Ta) 500mW (Ta) Surface Mount SOT-23-3
P-Channel 20V 1.5A (Ta) 500mW (Ta) Surface Mount SOT-23-3
P-Channel 20V 1.5A (Ta) 500mW (Ta) Surface Mount SOT-23-3
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016100-FDN308P
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 500mW (Ta)
Family Name: FDN308P
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SuperSOT-3
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 1.5A (Ta)
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 5.4nC @ 4.5V
Max Input Capacitance: 341pF @ 10V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 125 mOhm @ 1.5A, 4.5V
Alternative Parts (Cross-Reference): BSS215PH6327XTSA1; BSS215PL6327XT; RTR020P02FRATL; BSS215PL6327;
Introduction Date: February 26, 2001
ECCN: EAR99
Country of Origin: Malaysia, Philippines
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs
MOSFET Transistor, P Channel, -1.5 A, -20 V, 125 mohm, -4.5 V, -1 V RoHS Compliant: Yes
P CHANNEL MOSFET, -20V, 1.5A SUPER SOT-3, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:1.5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Power Dissipation:500mW RoHS Compliant: Yes
MOSFET P-CH 20V 1.5A SUPERSOT3
MOSFET P-Ch PowerTrench Specified 2.5V
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FDN308P | FDN308PFSCT-ND | 016100-FDN308P | 47T5037 | 82C2522 | FDN308P | FDN308P |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDN308P | Mosfet Transistor, P Channel, -1.5 A, -20 V, 125 Mohm, -4.5 V, -1 V Rohs Compliant Onsemi | P Channel Mosfet, -20V, 1.5A Super Sot-3, Full Reel; Channel Type Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 20 volts | 20 volts | |||||
| IDSS | 1500 milliamps | 1500 milliamps |
