onsemi 1.8V MOSFET Transistor FDN306P

Small Signal Field-Effect Transistor, 2.6A, 12V, P-Channel, MOSFET

MOSFETs P-Ch PowerTrench Specified 1.8V Product overview: FDN306P from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1.8V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1.8V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDN306P can be used for catalog matching and distributor lookup.

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016099-FDN306P
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 500mW (Ta)
Family Name: FDN306P
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SuperSOT-3
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 2.6A (Ta)
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 17nC @ 4.5V
Max Input Capacitance: 1138pF @ 6V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 40 mOhm @ 2.6A, 4.5V
Alternative Parts (Cross-Reference): IRLML6401TRPBF; IRLML6401GPBF; IRLML6401TRGPBF;
Introduction Date: December 20, 2001
ECCN: EAR99
Country of Origin: Israel, Philippines
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Power Management
Quantity per package: 3k pcs

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