P-Channel 20V 2.4A (Ta) 500mW (Ta) Surface Mount SOT-23-3
P-Channel 20V 2.4A (Ta) 500mW (Ta) Surface Mount SOT-23-3
P-Channel 20V 2.4A (Ta) 500mW (Ta) Surface Mount SOT-23-3
MOSFETs SSOT-3 P-CH 2.5V Product overview: FDN302P from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 2.5V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 2.5V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDN302P can be used for catalog matching and distributor lookup.
MOSFET P-CH 20V 2.4A SUPERSOT3
FDN302P - P Channel, MOSFET 2.5V
FDN302P - P Channel, MOSFET 2.5V
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016097-FDN302P
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 500mW (Ta)
Family Name: FDN302P
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SuperSOT-3
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 2.4A (Ta)
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 14nC @ 4.5V
Max Input Capacitance: 882pF @ 10V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 55 mOhm @ 2.4A, 4.5V
Alternative Parts (Cross-Reference): TSM2311CX RF; DMG2305UX-13; TSM2311CX;
Introduction Date: October 30, 2000
ECCN: EAR99
Country of Origin: Israel, Philippines
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Power Management
Quantity per package: 3k pcs
MOSFET P-Channel 20V 2.4A SuperSOT3
MOSFET P-Channel 20V 2.4A SuperSOT3
MOSFET P-Channel 20V 2.4A SuperSOT3
P CHANNEL MOSFET, -20V, 2.4A SUPER SOT-3; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:2.4A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:1V RoHS Compliant: Yes
MOSFET, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:2.4A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:1V; Power Dissipation:500mW RoHS Compliant: Yes
MOSFET P-CH 20V 2.4A SUPERSOT3
| DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Rochester Electronics | Win Source Electronics | RS Components, Ltd. | RS Components, Ltd. | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | FDN302PCT-ND | 2088-FDN302P | FDN302P | FDN302P | 016097-FDN302P | 6710400 | 6710400P | 58K8838 | 67R2053 | FDN302P | FDN302P |
| Product Name | Single FETs, MOSFETs | 2.5V MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDN302P | MOSFETs | MOSFETs | P Channel Mosfet, -20V, 2.4A Super Sot-3; Channel Type Onsemi | Mosfet, Full Reel; Channel Type Onsemi | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | |
| Polarity | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel | ||||
| Package Type | SOT23; TO-236-3, SC-59, SOT-23-3 | Reel | SOT23; TO-236-3, SC-59, SOT-23-3 | SSOT3-EUT | SOT3; SOT23; SuperSOT-3 | SOT23; Sot-23 | SOT23; SOT-23 | TO-3; SOT3 | TO-3 | SOT23; TO-236-3, SC-59, SOT-23-3 | |
| MOSFET Operating Mode | Enhancement | Enhancement | |||||||||
| Transconductance | 0.0100 kS | ||||||||||
| PD | 500 milliwatts | 500 milliwatts | 500 milliwatts | 500 milliwatts |
