MOSFETs 60V Nch Dual Cool Power Trench MOSFET Product overview: FDMT80060DC from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, 60V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 60V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDMT80060DC can be used for catalog matching and distributor lookup.
N-Channel 60V 43A (Ta), 292A (Tc) 3.2W (Ta), 156W (Tc) Surface Mount 8-Dual Cool™88
N-Channel 60V 43A (Ta), 292A (Tc) 3.2W (Ta), 156W (Tc) Surface Mount 8-Dual Cool™88
N-Channel 60V 43A (Ta), 292A (Tc) 3.2W (Ta), 156W (Tc) Surface Mount 8-Dual Cool™88
Win Source Part Number: 970947-FDMT80060DC
Category: Discrete Semiconductor Products>Transistors
Series: Dual Cool™, PowerTrench®
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 292A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 43A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 156W (Tc)
Package / Case: 8-PowerVDFN
Supplier Device Package: 8-Dual Cool™88
Gate Charge (Qg) (Max) @ Vgs: 238 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20170 pF @ 30 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 63 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: onsemi
Other Names: FDMT80060DCCT,FDMT80
Base Product Number: FDMT80060
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
MOSFET, N-CH, 60V, 292A, PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:292A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.00087ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power RoHS Compliant: Yes
MOSFET 60V Nch Dual Cool Power Trench MOSFET
MOSFET N-CH 60V 43A/292A 8DUAL
MOSFET N-CH 60V 43A/292A 8DUAL
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Newark, An Avnet Company | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 2088-FDMT80060DC | FDMT80060DCDKR-ND | 970947-FDMT80060DC | 07AH3937 | FDMT80060DC | FDMT80060DC | FDMT80060DC |
| Product Name | Dual 60V MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Mosfet, N-Ch, 60V, 292A, Pqfn; Transistor Polarity Onsemi | MOSFET | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | |||
| MOSFET Operating Mode | Enhancement | ||||||
| Transconductance | 0.1340 kS | ||||||
| PD | 156 milliwatts | 3200 to 156000 milliwatts | 3200 milliwatts | ||||
| Package Type | Reel | 8-PowerVDFN | SOT3 | TO-3 | 8-PowerVDFN | 8-PowerVDFN |
