onsemi FET, MOSFET Arrays FDMS9600S

Description
Mosfet Array 2 N-Channel (Dual) 30V 12A, 16A 1W Surface Mount 8-MLP (5x6), Power56
Request a Quote Datasheet
Description
Mosfet Array 2 N-Channel (Dual) 30V 12A, 16A 1W Surface Mount 8-MLP (5x6), Power56
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FET, MOSFET Arrays - FDMS9600STR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
FDMS9600STR-ND
FET, MOSFET Arrays FDMS9600STR-ND
Mosfet Array 2 N-Channel (Dual) 30V 12A, 16A 1W Surface Mount 8-MLP (5x6), Power56

Mosfet Array 2 N-Channel (Dual) 30V 12A, 16A 1W Surface Mount 8-MLP (5x6), Power56

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS9600S - 016095-FDMS9600S - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS9600S
016095-FDMS9600S
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS9600S 016095-FDMS9600S
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016095-FDMS9600S Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: Power56 Maximum Power Dissipation: 1W Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 12A, 16A Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 13nC @ 4.5V Max Input Capacitance: 1705pF @ 15V Maximum Rds On at Id,Vgs: 8.5 mOhm @ 12A, 10V Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Limited Quantity per package: 3k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016095-FDMS9600S
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: Power56
Maximum Power Dissipation: 1W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 12A, 16A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 13nC @ 4.5V
Max Input Capacitance: 1705pF @ 15V
Maximum Rds On at Id,Vgs: 8.5 mOhm @ 12A, 10V
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Limited
Quantity per package: 3k pcs

Buy Now Datasheet
FET, MOSFET Arrays - FDMS9600S - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
FDMS9600S
FET, MOSFET Arrays FDMS9600S
MOSFET 2N-CH 30V 12A/16A POWER56

MOSFET 2N-CH 30V 12A/16A POWER56

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDMS9600S - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDMS9600S
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDMS9600S
MOSFET 2N-CH 30V 12A 8MLP PWR56

MOSFET 2N-CH 30V 12A 8MLP PWR56

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FDMS9600STR-ND 016095-FDMS9600S FDMS9600S FDMS9600S
Product Name FET, MOSFET Arrays TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS9600S FET, MOSFET Arrays Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type 8-PowerWDFN SOT3; Power56 8-PowerWDFN
Polarity N-Channel N-Channel; 2 N-Channel (Dual)
V(BR)DSS 30 volts 30 volts
PD 1000 milliwatts
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