onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS8880 FDMS8880

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016093-FDMS8880 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: Power56 Dimension: 8-PowerTDFN Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 13.5A (Ta), 21A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 33nC @ 10V Max Input Capacitance: 1585pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 8.5 mOhm @ 13.5A, 10V Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Sufficient Quantity per package: 3k pcs
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016093-FDMS8880 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: Power56 Dimension: 8-PowerTDFN Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 13.5A (Ta), 21A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 33nC @ 10V Max Input Capacitance: 1585pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 8.5 mOhm @ 13.5A, 10V Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Sufficient Quantity per package: 3k pcs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS8880 - 016093-FDMS8880 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS8880
016093-FDMS8880
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS8880 016093-FDMS8880
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016093-FDMS8880 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: Power56 Dimension: 8-PowerTDFN Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 13.5A (Ta), 21A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 33nC @ 10V Max Input Capacitance: 1585pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 8.5 mOhm @ 13.5A, 10V Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Sufficient Quantity per package: 3k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016093-FDMS8880
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: Power56
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 13.5A (Ta), 21A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 33nC @ 10V
Max Input Capacitance: 1585pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 8.5 mOhm @ 13.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Sufficient
Quantity per package: 3k pcs

Buy Now Datasheet
Single FETs, MOSFETs - FDMS8880TR-ND - DigiKey
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Single FETs, MOSFETs
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Single FETs, MOSFETs FDMS8880TR-ND
N-Channel 30V 13.5A (Ta), 21A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount 8-PQFN (5x6)

N-Channel 30V 13.5A (Ta), 21A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount 8-PQFN (5x6)

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDMS8880 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDMS8880
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDMS8880
MOSFET N-CH 30V 13.5A/21A 8PQFN

MOSFET N-CH 30V 13.5A/21A 8PQFN

Supplier's Site
Sheung Wan, Hong Kong
MOSFET
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Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 016093-FDMS8880 FDMS8880TR-ND FDMS8880 FDMS8880
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS8880 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 30 volts
PD 2500 to 42000 milliwatts
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