Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016090-FDMS86520L
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Family Name: FDMS86520L
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-PQFN (5x6), Power56
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 13.5A (Ta), 22A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 63nC @ 10V
Max Input Capacitance: 4615pF @ 30V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 8.2 mOhm @ 13.5A, 10V
Alternative Parts (Cross-Reference): DMTH6009LPS-13; BSC097N06NST; BSC097N06NSTATMA1; Si7452DP-T1-E3;
Introduction Date: July 29, 2010
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Limited
Quantity per package: 3k pcs
N-Channel 60V 13.5A (Ta), 22A (Tc) 2.5W (Ta), 69W (Tc) Surface Mount 8-PQFN (5x6)
N-Channel 60V 13.5A (Ta), 22A (Tc) 2.5W (Ta), 69W (Tc) Surface Mount 8-PQFN (5x6)
N-Channel 60V 13.5A (Ta), 22A (Tc) 2.5W (Ta), 69W (Tc) Surface Mount 8-PQFN (5x6)
MOSFET N CH 60V 13.5A 8PQFN
MOSFET N CH 60V 13.5A 8PQFN
MOSFET 60V N-Channel PowerTrench MOSFET
| Win Source Electronics | DigiKey | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 016090-FDMS86520L | FDMS86520LFSTR-ND | FDMS86520L | FDMS86520L | FDMS86520L |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS86520L | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | ||
| V(BR)DSS | 60 volts | 60 volts | |||
| PD | 2500 to 69000 milliwatts | 2500 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |