onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS86520L FDMS86520L

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016090-FDMS86520L Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 69W (Tc) Family Name: FDMS86520L Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-PQFN (5x6), Power56 Dimension: 8-PowerTDFN Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 13.5A (Ta), 22A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 63nC @ 10V Max Input Capacitance: 4615pF @ 30V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 8.2 mOhm @ 13.5A, 10V Alternative Parts (Cross-Reference): DMTH6009LPS-13; BSC097N06NST; BSC097N06NSTATMA1; Si7452DP-T1-E3; Introduction Date: July 29, 2010 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Limited Quantity per package: 3k pcs
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016090-FDMS86520L Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 69W (Tc) Family Name: FDMS86520L Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-PQFN (5x6), Power56 Dimension: 8-PowerTDFN Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 13.5A (Ta), 22A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 63nC @ 10V Max Input Capacitance: 4615pF @ 30V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 8.2 mOhm @ 13.5A, 10V Alternative Parts (Cross-Reference): DMTH6009LPS-13; BSC097N06NST; BSC097N06NSTATMA1; Si7452DP-T1-E3; Introduction Date: July 29, 2010 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Limited Quantity per package: 3k pcs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS86520L - 016090-FDMS86520L - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS86520L
016090-FDMS86520L
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS86520L 016090-FDMS86520L
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016090-FDMS86520L Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 69W (Tc) Family Name: FDMS86520L Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-PQFN (5x6), Power56 Dimension: 8-PowerTDFN Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 13.5A (Ta), 22A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 63nC @ 10V Max Input Capacitance: 4615pF @ 30V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 8.2 mOhm @ 13.5A, 10V Alternative Parts (Cross-Reference): DMTH6009LPS-13; BSC097N06NST; BSC097N06NSTATMA1; Si7452DP-T1-E3; Introduction Date: July 29, 2010 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Limited Quantity per package: 3k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016090-FDMS86520L
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Family Name: FDMS86520L
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-PQFN (5x6), Power56
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 13.5A (Ta), 22A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 63nC @ 10V
Max Input Capacitance: 4615pF @ 30V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 8.2 mOhm @ 13.5A, 10V
Alternative Parts (Cross-Reference): DMTH6009LPS-13; BSC097N06NST; BSC097N06NSTATMA1; Si7452DP-T1-E3;
Introduction Date: July 29, 2010
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Limited
Quantity per package: 3k pcs

Buy Now Datasheet
Single FETs, MOSFETs - FDMS86520LFSTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDMS86520LFSTR-ND
Single FETs, MOSFETs FDMS86520LFSTR-ND
N-Channel 60V 13.5A (Ta), 22A (Tc) 2.5W (Ta), 69W (Tc) Surface Mount 8-PQFN (5x6)

N-Channel 60V 13.5A (Ta), 22A (Tc) 2.5W (Ta), 69W (Tc) Surface Mount 8-PQFN (5x6)

Buy Now Datasheet
Single FETs, MOSFETs - FDMS86520LFSDKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDMS86520LFSDKR-ND
Single FETs, MOSFETs FDMS86520LFSDKR-ND
N-Channel 60V 13.5A (Ta), 22A (Tc) 2.5W (Ta), 69W (Tc) Surface Mount 8-PQFN (5x6)

N-Channel 60V 13.5A (Ta), 22A (Tc) 2.5W (Ta), 69W (Tc) Surface Mount 8-PQFN (5x6)

Buy Now Datasheet
Single FETs, MOSFETs - FDMS86520LFSCT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDMS86520LFSCT-ND
Single FETs, MOSFETs FDMS86520LFSCT-ND
N-Channel 60V 13.5A (Ta), 22A (Tc) 2.5W (Ta), 69W (Tc) Surface Mount 8-PQFN (5x6)

N-Channel 60V 13.5A (Ta), 22A (Tc) 2.5W (Ta), 69W (Tc) Surface Mount 8-PQFN (5x6)

Buy Now Datasheet
Single FETs, MOSFETs - FDMS86520L - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDMS86520L
Single FETs, MOSFETs FDMS86520L
MOSFET N CH 60V 13.5A 8PQFN

MOSFET N CH 60V 13.5A 8PQFN

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDMS86520L - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDMS86520L
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDMS86520L
MOSFET N CH 60V 13.5A 8PQFN

MOSFET N CH 60V 13.5A 8PQFN

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 60V N-Channel PowerTrench MOSFET

MOSFET 60V N-Channel PowerTrench MOSFET

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 016090-FDMS86520L FDMS86520LFSTR-ND FDMS86520L FDMS86520L FDMS86520L
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS86520L Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel
V(BR)DSS 60 volts 60 volts
PD 2500 to 69000 milliwatts 2500 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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