POWER FIELD-EFFECT TRANSISTOR, 25A I(D), 60V, 0.0025OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, POWER-56 8 PIN. FREE 2 YEAR RADWELL WARRANTY
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016089-FDMS86500L
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-PQFN (5x6), Power56
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 25A (Ta), 80A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 165nC @ 10V
Max Input Capacitance: 12530pF @ 30V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2.5 mOhm @ 25A, 10V
Popularity: Medium
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs
MOSFET N-CH 60V 25A/80A 8PQFN
N-Channel 60V 25A (Ta), 80A (Tc) 2.5W (Ta), 104W (Tc) Surface Mount 8-PQFN (5x6)
N-Channel 60V 25A (Ta), 80A (Tc) 2.5W (Ta), 104W (Tc) Surface Mount 8-PQFN (5x6)
N-Channel 60V 25A (Ta), 80A (Tc) 2.5W (Ta), 104W (Tc) Surface Mount 8-PQFN (5x6)
MOSFET, N-CH, 60V, 158A, 104W, PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:158A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0021ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V; Power RoHS Compliant: Yes
MOSFET, N CHANNEL, 60V, 80A, POWER56; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:80A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.8V RoHS Compliant: Yes
MOSFET 60V N-Channel PowerTrench MOSFET
MOSFET N-CH 60V 25A/80A 8PQFN
| Radwell International | Win Source Electronics | ODG (Origin Data Global) | DigiKey | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 38463050 | 016089-FDMS86500L | FDMS86500L | FDMS86500LFSCT-ND | 85AC1779 | 88T3346 | FDMS86500L | FDMS86500L |
| Product Name | Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS86500L | Single FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, N-Ch, 60V, 158A, 104W, Pqfn; Transistor Polarity Onsemi | Mosfet, N Channel, 60V, 80A, Power56; Channel Type Onsemi | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | ||||
| V(BR)DSS | 60 volts | 60 volts | ||||||
| PD | 2500 to 104000 milliwatts | 2500 milliwatts | ||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||||
| Package Type | SOT3; 8-PQFN (5x6), Power56 | 8-PowerTDFN | 8-PowerTDFN | TO-3 | TO-3 | 8-PowerTDFN |
