onsemi Single FETs, MOSFETs FDMS86350

Description
MOSFET N-CH 80V 25A/130A POWER56
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Description
MOSFET N-CH 80V 25A/130A POWER56
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Datasheet
Datasheet Summary
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The FDMS86350 is an N-Channel MOSFET designed for high-performance applications, featuring a maximum drain-source voltage (V_DS) of 80V and a continuous drain current (I_D) rating of 130A. It exhibits a low on-resistance (R_DS(on)) of 2.4 mOc at a gate-source voltage (V_GS) of 10V and 25A, which contributes to its efficiency in power management. The device is suitable for various applications, including synchronous rectification, load switching, and motor control. It is RoHS compliant and comes in a robust MSL1 package, ensuring reliability in demanding environments. The operating temperature range is from -55¬8C to +150¬8C, making it versatile for different thermal conditions. The FDMS86350 is fully tested for quality assurance, with a maximum power dissipation of 156W at a case temperature of 25¬8C.

Datasheet Summary
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The FDMS86350 is an N-Channel MOSFET designed for high-performance applications, featuring a maximum drain-source voltage (V_DS) of 80V and a continuous drain current (I_D) rating of 130A. It exhibits a low on-resistance (R_DS(on)) of 2.4 mOc at a gate-source voltage (V_GS) of 10V and 25A, which contributes to its efficiency in power management. The device is suitable for various applications, including synchronous rectification, load switching, and motor control. It is RoHS compliant and comes in a robust MSL1 package, ensuring reliability in demanding environments. The operating temperature range is from -55¬8C to +150¬8C, making it versatile for different thermal conditions. The FDMS86350 is fully tested for quality assurance, with a maximum power dissipation of 156W at a case temperature of 25¬8C.

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FDMS86350 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDMS86350
Single FETs, MOSFETs FDMS86350
MOSFET N-CH 80V 25A/130A POWER56

MOSFET N-CH 80V 25A/130A POWER56

Supplier's Site Datasheet
MOSFETs - 8648483P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
8648483P
MOSFETs 8648483P
MOSFET N-Ch 80V 130A PowerTrench PQFN8

MOSFET N-Ch 80V 130A PowerTrench PQFN8

Supplier's Site
MOSFETs - 8648483 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
8648483
MOSFETs 8648483
MOSFET N-Ch 80V 130A PowerTrench PQFN8

MOSFET N-Ch 80V 130A PowerTrench PQFN8

Supplier's Site
MOSFETs - 1662155 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1662155
MOSFETs 1662155
MOSFET N-Ch 80V 130A PowerTrench PQFN8

MOSFET N-Ch 80V 130A PowerTrench PQFN8

Supplier's Site
Singapore
N-Channel 80V MOSFET Transistor
2088-FDMS86350
N-Channel 80V MOSFET Transistor 2088-FDMS86350
MOSFETs 80V N-Channel PowerTrench MOSFET Product overview: FDMS86350 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 80V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDMS86350 can be used for catalog matching and distributor lookup.

MOSFETs 80V N-Channel PowerTrench MOSFET Product overview: FDMS86350 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 80V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDMS86350 can be used for catalog matching and distributor lookup.

Supplier's Site
Single FETs, MOSFETs - FDMS86350CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDMS86350CT-ND
Single FETs, MOSFETs FDMS86350CT-ND
N-Channel 80V 25A (Ta), 130A (Tc) 2.7W (Ta), 156W (Tc) Surface Mount 8-PQFN (5x6)

N-Channel 80V 25A (Ta), 130A (Tc) 2.7W (Ta), 156W (Tc) Surface Mount 8-PQFN (5x6)

Buy Now Datasheet
Single FETs, MOSFETs - FDMS86350DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDMS86350DKR-ND
Single FETs, MOSFETs FDMS86350DKR-ND
N-Channel 80V 25A (Ta), 130A (Tc) 2.7W (Ta), 156W (Tc) Surface Mount 8-PQFN (5x6)

N-Channel 80V 25A (Ta), 130A (Tc) 2.7W (Ta), 156W (Tc) Surface Mount 8-PQFN (5x6)

Buy Now Datasheet
Single FETs, MOSFETs - FDMS86350TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDMS86350TR-ND
Single FETs, MOSFETs FDMS86350TR-ND
N-Channel 80V 25A (Ta), 130A (Tc) 2.7W (Ta), 156W (Tc) Surface Mount 8-PQFN (5x6)

N-Channel 80V 25A (Ta), 130A (Tc) 2.7W (Ta), 156W (Tc) Surface Mount 8-PQFN (5x6)

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS86350 - 1173849-FDMS86350 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS86350
1173849-FDMS86350
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS86350 1173849-FDMS86350
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1173849-FDMS86350 Series: PowerTrench Packaging: Reel - TR Operating Temperature Range: -55°C ~ 150°C (TJ) Package: 8-PowerTDFN Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 130A (Tc) Family Name: FDMS86350 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Manufacturer Homepage: www.fairchildsemi.co m Manufacturer Package: Power56 Channel Type Type: N Drain Source Voltage: 80V Vgs(th) (Maximum) @ Id: 4.5V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 155nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 10680pF @ 40V Vgs (Maximum): ±20V Power Dissipation (Maximum): 2.7W (Ta), 156W (Tc) Rds On (Maximum) @ Id, Vgs: 2.4 mOhm @ 25A, 10V Alternative Parts (Cross-Reference): BSC030N08NS5; BSC026N08NS5ATMA1; BSC030N08NS5ATMA1; ECCN: EAR99 Country of Origin: Philippines, Republic of Korea Estimated EOL Date: 2026 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Limited Quantity per package: 3k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1173849-FDMS86350
Series: PowerTrench
Packaging: Reel - TR
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: 8-PowerTDFN
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 130A (Tc)
Family Name: FDMS86350
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Manufacturer Homepage: www.fairchildsemi.com
Manufacturer Package: Power56
Channel Type Type: N
Drain Source Voltage: 80V
Vgs(th) (Maximum) @ Id: 4.5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 155nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 10680pF @ 40V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 2.7W (Ta), 156W (Tc)
Rds On (Maximum) @ Id, Vgs: 2.4 mOhm @ 25A, 10V
Alternative Parts (Cross-Reference): BSC030N08NS5; BSC026N08NS5ATMA1; BSC030N08NS5ATMA1;
ECCN: EAR99
Country of Origin: Philippines, Republic of Korea
Estimated EOL Date: 2026
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Limited
Quantity per package: 3k pcs

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET FET 80V 2.4 MOHM PQFN56

MOSFET FET 80V 2.4 MOHM PQFN56

Buy Now Datasheet
Mosfet, N-Ch, 80V, 130A, Power 56-8; Transistor Polarity Onsemi - 46AC0801 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 80V, 130A, Power 56-8; Transistor Polarity Onsemi
46AC0801
Mosfet, N-Ch, 80V, 130A, Power 56-8; Transistor Polarity Onsemi 46AC0801
MOSFET, N-CH, 80V, 130A, POWER 56-8; Transistor Polarity:N Channel; Continuous Drain Current Id:130A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.002ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.8V; Power RoHS Compliant: Yes

MOSFET, N-CH, 80V, 130A, POWER 56-8; Transistor Polarity:N Channel; Continuous Drain Current Id:130A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.002ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.8V; Power RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDMS86350 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDMS86350
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDMS86350
MOSFET N-CH 80V 25A/130A POWER56

MOSFET N-CH 80V 25A/130A POWER56

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) RS Components, Ltd. RS Components, Ltd. ERSAELECTRONICS PTE. LTD. DigiKey Win Source Electronics VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FDMS86350 8648483P 8648483 2088-FDMS86350 FDMS86350CT-ND 1173849-FDMS86350 FDMS86350 46AC0801 FDMS86350
Product Name Single FETs, MOSFETs MOSFETs MOSFETs N-Channel 80V MOSFET Transistor Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS86350 MOSFET Mosfet, N-Ch, 80V, 130A, Power 56-8; Transistor Polarity Onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 80 volts
IDSS 25000 milliamps 130000 milliamps
PD 2700 milliwatts 156 milliwatts 2700 to 156000 milliwatts
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