onsemi FDMS86350-01

The FDMS86350 is an N-channel MOSFET designed for high-efficiency switching applications such as synchronous rectifiers and load switches. It is packaged in a PQFN8 5x6 mm, 1.27 mm pitch case with a maximum drain-to-source voltage of 80 V and a continuous drain current of 130 A at TC = 25°C. The device has a maximum on-resistance of 2.4 mΩ at VGS = 10 V and ID = 25 A, and 3.2 mΩ at VGS = 8 V and ID = 22 A. It supports a single pulse avalanche energy of 864 mJ and has a thermal resistance from junction to case of 0.8 °C/W. The part is RoHS compliant and halogen-free, with an operating junction temperature range of -55°C to +150°C.