MOSFET N-CH 80V 10.5A/22A 8PQFN
MOSFETs N-Chan PowerTrench MOSFET 80V, 22A Product overview: FDMS86320 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 22A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80V, 22A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDMS86320 can be used for catalog matching and distributor lookup.
N-Channel 80V 10.5A (Ta), 22A (Tc) 2.5W (Ta), 69W (Tc) Surface Mount 8-PQFN (5x6)
N-Channel 80V 10.5A (Ta), 22A (Tc) 2.5W (Ta), 69W (Tc) Surface Mount 8-PQFN (5x6)
N-Channel 80V 10.5A (Ta), 22A (Tc) 2.5W (Ta), 69W (Tc) Surface Mount 8-PQFN (5x6)
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038268-FDMS86320
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-PQFN (5x6), Power56
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 80V
Continuous Drain Current at 25°C: 10.5A (Ta), 22A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 41nC @ 10V
Max Input Capacitance: 2640pF @ 40V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 11.7 mOhm @ 10.5A, 10V
Alternative Parts (Cross-Reference): BSC117N08NS5; FDMS86380_F085; STL75N8LF6;
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs
MOSFET N-Chan PowerTrench MOSFET 80V, 22A
Power-56-8 MOSFETs ROHS
MOSFET N-Chan PowerTrench MOSFET 80V, 22A
MOSFET N-CH 80V 10.5A/22A 8PQFN
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Utmel Electronic Limited | LCSC Electronics Technology (HK) Limited | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | FDMS86320 | 2088-FDMS86320 | FDMS86320TR-ND | 1038268-FDMS86320 | 598-FDMS86320 | FDMS86320 | FDMS86320 | FDMS86320 |
| Product Name | Single FETs, MOSFETs | 80V 22A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS86320 | MOSFET N-Chan PowerTrench MOSFET 80V, 22A | Triode/MOS Tube/Transistor >> MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | SILICON | ||||||
| V(BR)DSS | 80 volts | 80 volts | 80 volts | |||||
| IDSS | 10500 milliamps | |||||||
| PD | 2500 milliwatts | 69 milliwatts | 2500 to 69000 milliwatts | 69000 milliwatts |