N-Channel 80V 17A (Ta), 50A (Tc) 2.5W (Ta), 96W (Tc) Surface Mount 8-PQFN (5x6)
N-Channel 80V 17A (Ta), 50A (Tc) 2.5W (Ta), 96W (Tc) Surface Mount 8-PQFN (5x6)
N-Channel 80V 17A (Ta), 50A (Tc) 2.5W (Ta), 96W (Tc) Surface Mount 8-PQFN (5x6)
MOSFETs 80V N-Channel PowerTrench MOSFET Product overview: FDMS86310 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 80V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDMS86310 can be used for catalog matching and distributor lookup.
MOSFET N-CH 80V 17A/50A 8PQFN
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038267-FDMS86310
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Family Name: FDMS86310
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-PQFN (5x6), Power56
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 80V
Continuous Drain Current at 25°C: 17A (Ta), 50A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 95nC @ 10V
Max Input Capacitance: 6290pF @ 40V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 4.8 mOhm @ 17A, 10V
Alternative Parts (Cross-Reference): BSC057N08NS3 G; SiR826BDP-T1-RE3; BSC057N08NS3GZT; BSC057N08NS3GXT;
Introduction Date: January 30, 2012
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2028
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Limited
Quantity per package: 3k pcs
MOSFET N-CH 80V 17A/50A 8PQFN
MOSFET 80V N-Channel PowerTrench MOSFET
| DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FDMS86310TR-ND | 2088-FDMS86310 | FDMS86310 | 1038267-FDMS86310 | FDMS86310 | FDMS86310 |
| Product Name | Single FETs, MOSFETs | N-Channel 80V MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS86310 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | ||
| Package Type | 8-PowerTDFN | Reel | 8-PowerTDFN | SOT3; 8-PQFN (5x6), Power56 | 8-PowerTDFN | |
| MOSFET Operating Mode | Enhancement | |||||
| PD | 96 milliwatts | 2500 milliwatts | 2500 to 96000 milliwatts | |||
| Packing Method | Reel | Tape Reel; Reel - TR | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR |