Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038267-FDMS86310
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Family Name: FDMS86310
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-PQFN (5x6), Power56
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 80V
Continuous Drain Current at 25°C: 17A (Ta), 50A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 95nC @ 10V
Max Input Capacitance: 6290pF @ 40V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 4.8 mOhm @ 17A, 10V
Alternative Parts (Cross-Reference): BSC057N08NS3 G; SiR826BDP-T1-RE3; BSC057N08NS3GZT; BSC057N08NS3GXT;
Introduction Date: January 30, 2012
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2028
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Limited
Quantity per package: 3k pcs
N-Channel 80V 17A (Ta), 50A (Tc) 2.5W (Ta), 96W (Tc) Surface Mount 8-PQFN (5x6)
N-Channel 80V 17A (Ta), 50A (Tc) 2.5W (Ta), 96W (Tc) Surface Mount 8-PQFN (5x6)
N-Channel 80V 17A (Ta), 50A (Tc) 2.5W (Ta), 96W (Tc) Surface Mount 8-PQFN (5x6)
MOSFET N-CH 80V 17A/50A 8PQFN
MOSFET 80V N-Channel PowerTrench MOSFET
MOSFET N-CH 80V 17A/50A 8PQFN
| Win Source Electronics | DigiKey | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1038267-FDMS86310 | FDMS86310TR-ND | FDMS86310 | FDMS86310 | FDMS86310 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS86310 | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | ||
| V(BR)DSS | 80 volts | 80 volts | |||
| PD | 2500 to 96000 milliwatts | 2500 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |