onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS86310 FDMS86310

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038267-FDMS86310 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 96W (Tc) Family Name: FDMS86310 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-PQFN (5x6), Power56 Dimension: 8-PowerTDFN Drain-Source Breakdown Voltage: 80V Continuous Drain Current at 25°C: 17A (Ta), 50A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 95nC @ 10V Max Input Capacitance: 6290pF @ 40V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 4.8 mOhm @ 17A, 10V Alternative Parts (Cross-Reference): BSC057N08NS3 G; SiR826BDP-T1-RE3; BSC057N08NS3GZT; BSC057N08NS3GXT; Introduction Date: January 30, 2012 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2028 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Limited Quantity per package: 3k pcs
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038267-FDMS86310 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 96W (Tc) Family Name: FDMS86310 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-PQFN (5x6), Power56 Dimension: 8-PowerTDFN Drain-Source Breakdown Voltage: 80V Continuous Drain Current at 25°C: 17A (Ta), 50A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 95nC @ 10V Max Input Capacitance: 6290pF @ 40V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 4.8 mOhm @ 17A, 10V Alternative Parts (Cross-Reference): BSC057N08NS3 G; SiR826BDP-T1-RE3; BSC057N08NS3GZT; BSC057N08NS3GXT; Introduction Date: January 30, 2012 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2028 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Limited Quantity per package: 3k pcs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS86310 - 1038267-FDMS86310 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS86310
1038267-FDMS86310
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS86310 1038267-FDMS86310
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038267-FDMS86310 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 96W (Tc) Family Name: FDMS86310 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-PQFN (5x6), Power56 Dimension: 8-PowerTDFN Drain-Source Breakdown Voltage: 80V Continuous Drain Current at 25°C: 17A (Ta), 50A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 95nC @ 10V Max Input Capacitance: 6290pF @ 40V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 4.8 mOhm @ 17A, 10V Alternative Parts (Cross-Reference): BSC057N08NS3 G; SiR826BDP-T1-RE3; BSC057N08NS3GZT; BSC057N08NS3GXT; Introduction Date: January 30, 2012 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2028 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Limited Quantity per package: 3k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038267-FDMS86310
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Family Name: FDMS86310
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-PQFN (5x6), Power56
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 80V
Continuous Drain Current at 25°C: 17A (Ta), 50A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 95nC @ 10V
Max Input Capacitance: 6290pF @ 40V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 4.8 mOhm @ 17A, 10V
Alternative Parts (Cross-Reference): BSC057N08NS3 G; SiR826BDP-T1-RE3; BSC057N08NS3GZT; BSC057N08NS3GXT;
Introduction Date: January 30, 2012
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2028
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Limited
Quantity per package: 3k pcs

Buy Now Datasheet
Single FETs, MOSFETs - FDMS86310TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDMS86310TR-ND
Single FETs, MOSFETs FDMS86310TR-ND
N-Channel 80V 17A (Ta), 50A (Tc) 2.5W (Ta), 96W (Tc) Surface Mount 8-PQFN (5x6)

N-Channel 80V 17A (Ta), 50A (Tc) 2.5W (Ta), 96W (Tc) Surface Mount 8-PQFN (5x6)

Buy Now Datasheet
Single FETs, MOSFETs - FDMS86310DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDMS86310DKR-ND
Single FETs, MOSFETs FDMS86310DKR-ND
N-Channel 80V 17A (Ta), 50A (Tc) 2.5W (Ta), 96W (Tc) Surface Mount 8-PQFN (5x6)

N-Channel 80V 17A (Ta), 50A (Tc) 2.5W (Ta), 96W (Tc) Surface Mount 8-PQFN (5x6)

Buy Now Datasheet
Single FETs, MOSFETs - FDMS86310CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDMS86310CT-ND
Single FETs, MOSFETs FDMS86310CT-ND
N-Channel 80V 17A (Ta), 50A (Tc) 2.5W (Ta), 96W (Tc) Surface Mount 8-PQFN (5x6)

N-Channel 80V 17A (Ta), 50A (Tc) 2.5W (Ta), 96W (Tc) Surface Mount 8-PQFN (5x6)

Buy Now Datasheet
Single FETs, MOSFETs - FDMS86310 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDMS86310
Single FETs, MOSFETs FDMS86310
MOSFET N-CH 80V 17A/50A 8PQFN

MOSFET N-CH 80V 17A/50A 8PQFN

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET 80V N-Channel PowerTrench MOSFET

MOSFET 80V N-Channel PowerTrench MOSFET

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDMS86310 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDMS86310
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDMS86310
MOSFET N-CH 80V 17A/50A 8PQFN

MOSFET N-CH 80V 17A/50A 8PQFN

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1038267-FDMS86310 FDMS86310TR-ND FDMS86310 FDMS86310 FDMS86310
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS86310 Single FETs, MOSFETs Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel
V(BR)DSS 80 volts 80 volts
PD 2500 to 96000 milliwatts 2500 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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