P-Channel 150V 4.4A (Ta), 22A (Tc) 2.5W (Ta), 104W (Tc) Surface Mount 8-PQFN (5x6)
P-Channel 150V 4.4A (Ta), 22A (Tc) 2.5W (Ta), 104W (Tc) Surface Mount 8-PQFN (5x6)
P-Channel 150V 4.4A (Ta), 22A (Tc) 2.5W (Ta), 104W (Tc) Surface Mount 8-PQFN (5x6)
MOSFETs PT5 150/25V Pch Pwr Trench MOSFET Product overview: FDMS86263P from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 25V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 25V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDMS86263P can be used for catalog matching and distributor lookup.
MOSFET P-CH 150V 4.4A/22A 8PQFN
Manufacturer: ON Semiconductor
Win Source Part Number: 804049-FDMS86263P
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 150V
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: 8-PowerTDFN
Power Dissipation (Maximum): 2.5W , 104W (Tc)
Popularity: Medium
Fake Threat In the Open Market: 74 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 3,000
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 53mOhm at 4.4A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 63nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 3905pF at 75V
Current - Continuous Drain (Id) at 25°C: 4.4A , 22A (Tc)
Vgs(th) (Maximum) at Id: 4V at 250μA
Maximum Vgs: ±25V
MOSFET, P-CH, -150V, -22A, POWER 56-8; Transistor Polarity:P Channel; Continuous Drain Current Id:-22A; Drain Source Voltage Vds:-150V; On Resistance Rds(on):0.042ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.9V; PowerRoHS Compliant: Yes
MOSFET P-CH 150V 4.4A/22A 8PQFN
MOSFET PT5 150/25V Pch Pwr Trench MOSFET
| DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FDMS86263PTR-ND | 2088-FDMS86263P | FDMS86263P | 804049-FDMS86263P | 46AC0800 | FDMS86263P | FDMS86263P |
| Product Name | Single FETs, MOSFETs | 25V MOSFET Transistor | Single FETs, MOSFETs | FETs - Single - FDMS86263P | Mosfet, P-Ch, -150V, -22A, Power 56-8; Transistor Polarity Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | |||
| Package Type | 8-PowerTDFN | Reel | 8-PowerTDFN | SOT3 | TO-3 | 8-PowerTDFN | |
| MOSFET Operating Mode | Enhancement | ||||||
| Transconductance | 0.0190 kS | ||||||
| PD | 104 milliwatts | 2500 milliwatts | 2500 to 104000 milliwatts |